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Generation of Long-Wavelength Stimulated Emission in HgCdTe Quantum Wells with an Increased Auger Recombination Threshold
Various designs of dielectric waveguides made of heterostructures with CdHgTe quantum wells grown by molecular beam epitaxy have been studied to...
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Carrier Recombination and Noise
In steady state, for each act of carrier generation or excitation there must be one inverse process of recombination or relaxation. Carriers can... -
Auger effect in weakly confined nanocrystals
An extensive analysis of biexciton luminescence in high-quality, large perovskite CsPbBr 3 nanocrystals shows how the biexciton Auger decay rate...
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Generation–Recombination Processes
The main recombination mechanisms in semiconductors—radiative, Auger, Shockley–Read–Hall, and surface recombination—are reviewed. Their effect on the... -
Auger spectroscopy beyond the ultra-short core-hole relaxation time approximation
We present a time-dependent computational approach to study Auger electron spectroscopy (AES) beyond the ultra-short core-hole relaxation time...
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Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure
This study used a numerical model to analyze the Auger current in c-plane InGaN / GaN multiple-quantum well solar cells (MQWSC) under hydrostatic...
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Analysis of contributions of electron-phonon relaxation and recombination processes to silicon heating by femtosecond laser pulse
The paper presents the results of numerical modeling the multistage heating dynamics for monocrystalline silicon under the influence of a femtosecond...
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Study of a Nonequilibrium Auger-Transition Using Emission Auger Spectroscopy
A nonequilibrium Auger transition consisting of a vacancy in the valence layer being filled within ~10 –14 s by a probe electron that receives the...
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Carrier Recombination and Noise
In steady state, for each act of carrier generation or excitation there must be one inverse process of recombination or relaxation. Carriers can... -
Recombination
The various mechanisms and statistics of carrier recombination in semiconductors including band-band, excitonic, band-impurity (Shockley-Read-Hall... -
High-efficiency photoemission from magnetically doped quantum dots driven by multi-step spin-exchange Auger ionization
Materials displaying electron photoemission under visible-light excitation are of great interest for applications in photochemistry, photocathodes,...
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Recombination Emission of Quantum Wires in Electric Field and Prospects for Its Lasing
AbstractIt is found that one-photon recombination in thin quantum wires in longitudinal electric field in monochromatic photon emission, despite the...
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Modulation of Recombination Radiation in Quantum Wires by Electric Field and the Possibility of Its Application in Quantum Electronics
AbstractThe cross section for the process of single-photon recombination of free charge carriers in the 1D geometry of a thin quantum wire in a...
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Gigantic suppression of recombination rate in 3D lead-halide perovskites for enhanced photodetector performance
Prolonging the carrier lifetime in lead-halide perovskite (LHP) can enable novel schemes for highly efficient energy-harvesting and photodetection...
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Recombination Kinetics of Excitons and Trions in Free-Standing CdS Quantum Dots Synthesized by the Langmuir–Blodgett Method
AbstractCdS quantum dots prepared by the Langmuir–Blodgett method have been investigated using UV spectroscopy and time-resolved photoluminescence....
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A simple model of the trap-assisted recombination with the excitonic Auger mechanism
We present a simple model of the trap-assisted recombination combined with the excitonic Auger mechanism. It has been shown that only six independent...
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Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature....
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Nonlocal interaction enhanced biexciton emission in large CsPbBr3 nanocrystals
Biexciton emission in quantum dots is an efficient way to generate entangled photon pairs, which are key resources in quantum informatics. Compared...
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An improved model for describing the net carrier recombination rate in semiconductor devices
Carrier recombination is a process that significantly influences the performance of semiconductor devices such as solar cells, photodiodes, and...
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Effect of copper do** on the lifetime of the upper 5T2 laser level of the iron ion in ZnSe
The effect of copper do** of ZnSe:Fe crystals on the kinetics of luminescence of iron ions is investigated in this work. It has been discovered...