Abstract
The main recombination mechanisms in semiconductors—radiative, Auger, Shockley–Read–Hall, and surface recombination—are reviewed. Their effect on the non-equilibrium concentration of electrons and holes is described with the help of the recombination rate, which depends on the excess carrier concentration. At small excess concentration values, one can linearize the recombination rate and use the recombination time approach. The concept of quasi-Fermi energy is introduced.
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Notes
- 1.
Singular: imref. This word is derived from the name Fermi spelled backwards, and is sometimes interpreted as “imaginary reference.”
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Evstigneev, M. (2022). Generation–Recombination Processes. In: Introduction to Semiconductor Physics and Devices. Springer, Cham. https://doi.org/10.1007/978-3-031-08458-4_7
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DOI: https://doi.org/10.1007/978-3-031-08458-4_7
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Publisher Name: Springer, Cham
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Online ISBN: 978-3-031-08458-4
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