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Leptoquark manoeuvres in the dark: a simultaneous solution of the dark matter problem and the \( {R}_{D^{\left(\ast \right)}} \) anomalies
The measured branching fractions of B -mesons into leptonic final states derived by the LHCb, Belle and BaBar collaborations hint towards the...
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Relevant characteristics of undoped GaMnN grown by using molecular beam epitaxy
GaN:Mn epilayers were grown on Al2O3 substrate by using molecular beam epitaxy (MBE). Xray diffraction (XRD) data showed intrinsic GaMnN and...
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Synthesis of highly crystalline Ga-doped zinc-oxide nanoparticles for hybrid polymer solar cells
Gallium (Ga)-doped zinc-oxide (ZnO) nanoparticles (NPs) were synthesized by using a polymer pyrolysis method. The smallest size of the obtained...
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Effects of do** concentration on the structural and the optical properties of Sol-gel-derived In-doped ZnO thin films grown on muscovite mica substrates
In-doped ZnO (IZO) thin films were grown on muscovite mica substrates by using the sol-gel process. The structural and the optical properties of IZO...
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Growth and fabrication method of CdTe and its performance as a radiation detector
A CdTe crystal ingot doped with 2000 ppm of Cl was grown by using the low-pressure Bridgman (LPB) method at the Korea Atomic Energy Research...
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Effects of sulfur introduction on the UV and the visible emission properties of ZnO
Hexagonal ZnO particles have been synthesized by using the hydrothermal method with different sulfur concentrations in the reaction solutions....
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Influence of Al-, Co-, Cu-, and In-doped ZnO buffer layers on the structural and the optical properties of ZnO thin films
Zinc oxide (ZnO) thin films without a buffer layer and with Al-, Co-, Cu-, and In-doped ZnO buffer layers were prepared by using the sol-gel...
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Searches for third-generation squark production in fully hadronic final states in proton-proton collisions at \( \sqrt{s}=8 \) TeV
Searches for third-generation squarks in fully hadronic final states are presented using data samples corresponding to integrated luminosities of...
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Diluted ferromagnetic semiconductor (LaCa)(ZnMn)SbO isostructural to “1111” type iron pnictide superconductors
We report discovery of ferromagnetism in (LaCa)(ZnMn)SbO isostructural to the well-studied iron-based superconductor LaFeAs(O 1− x ...
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Structural and optical characterization of GaN nanostructures formed by using N+ implantation into GaAs at various temperature
We have investigated the evolution of GaN phase nanocrystallite formation in a GaAs matrix by using nitrogen-ion implantation and subsequent rapid...
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Formation of acceptor centers under the action of redox media on the surface of Cd x Hg1 − x Te films
The effect of redox media on the formation of acceptor centers in the Cd x Hg 1 − x Te films grown by molecular beam epitaxy on the GaAs (301)...
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Optical properties of the Si-doped GaN/Al2O3 films
Morphological and optical studies of the Si-doped GaN films (do** level N Si = 1.5 × 10 19 cm −3 ) grown by vapor-phase epitaxy from metalorganic...
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On the effective anisotropy of the 91–1,094 keV γγ-cascade in 172Yb
The suitability of the 91–1,094 keV γγ -cascade in 172 Lu( 172 Yb) for perturbed angular correlation studies has been demonstrated several decades ago....
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Structural and magnetic properties of Fe doped NiO
Mott-Hubbard anti-ferromagnetic insulator, NiO shows p -type semiconducting behaviour due to vacancy at Ni 2+ site in its bunsenite structure. We...
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Mn–AlInN: a new diluted magnetic semiconductor
Mn ions have been incorporated into MOCVD grown Al 1− x In x N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the...
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Influence of europium do** on the sensitization of luminescence in GaAs/AlGaAs and InGaN/GaN quantum-well structures
A correlation between the photoluminescence spectra and structural parameters of Eu-doped quantum- well nanostructures InGaN/GaN and GaAs/AlGaAs is...
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Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching
Electrical properties of MBE-grown n -HgCdTe layers, both undoped and In-doped during growth and modified by ion etching are studied. It is...
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Parameters of vacancies’ formation in the carbon-subgroup crystals
The parameters of formation of vacancies in crystals of elements of the carbon subgroup (C diam , Si, Ge, α-Sn, Pb) are calculated. The method used...
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Adiabatic elastic moduli in ZnSe : Mn2+ and ZnSe : V2+ crystals
The temperature dependences of the elastic moduli C 44 ( C 11 − C 12 )/2 and C l = ( C 11 + C 12 + 2 C 44 )/2 of ZnSe : V 2+ (impurity concentration, 6 × 10
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Low-temperature relaxation in the ZnSe : V2+ crystal
Low-temperature anomalies in absorption of the fast transverse and longitudinal ultrasonic waves are revealed in a ZnSe crystal lightly doped (5.6 ×...