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Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Electrical properties of MBE-grown n-HgCdTe layers, both undoped and In-doped during growth and modified by ion etching are studied. It is established that initially neutral defects with a concentration ∼1017 cm−3 are present in these structures. These defects are activated by ion etching and form donor centers. Comparison of the obtained experimental results with the published data shows that these defects are formed at the growth stage of the structures. After the ion etching is stopped, donor centers decompose and for ∼5 × 103 min, the electron concentration in the structures is stabilized. The obtained data allow one to determine the amount of indium necessary for the obtainment of reproducible electron concentration in n-type regions of HgCdTe-based LED structures formed by ion etching.

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Authors and Affiliations

  1. Institute of Physics, Rzeshóv Universtity, 35-310, Rzeshóv, Poland

    M. Pociask

  2. Research Institute for Materials NPP Karat, Lviv, 79031, Ukraine

    I. I. Izhnin

  3. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin & K. D. Mynbaev

  4. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. I. Ivanov-Omskii

Authors
  1. M. Pociask
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  2. I. I. Izhnin
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  3. S. A. Dvoretsky
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  4. N. N. Mikhailov
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  5. Yu. G. Sidorov
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  6. V. S. Varavin
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  7. K. D. Mynbaev
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  8. V. I. Ivanov-Omskii
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Correspondence to I. I. Izhnin.

Additional information

Original Russian Text © M. Pociask, I.I. Izhnin, S.A. Dvoretsky, N.N. Mikhailov, Yu.G. Sidorov, V.S. Varavin, K.D. Mynbaev, V.I. Ivanov-Omskii, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 12, pp. 1444–1447.

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Pociask, M., Izhnin, I.I., Dvoretsky, S.A. et al. Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching. Semiconductors 42, 1413–1415 (2008). https://doi.org/10.1134/S1063782608120075

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  • DOI: https://doi.org/10.1134/S1063782608120075

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