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Relevant characteristics of undoped GaMnN grown by using molecular beam epitaxy

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Abstract

GaN:Mn epilayers were grown on Al2O3 substrate by using molecular beam epitaxy (MBE). Xray diffraction (XRD) data showed intrinsic GaMnN and precipitates including MnGa and MnN. PL transitions (e, Mn) and (D, Mn) related to Mn were remarkably activated. Clear ferromagnetic hysteresis loops were obtained in both samples, which means a good formation of ferromagnetic coupling. The M-T curves revealed a curie temperature (T c ) of 140 ~ 170 K which is intrinsic to GaMnN and a Tc of above 300 K which is due to the MnGa and the MnN precipitates. The samples clearly displayed a magnetic resonance at a field of around 200 - 400 mT. Electron spin resonance (ESR) data showed that the shift of (H center ) (i.e., H center = 337 - H center [mT]) were greater than 20 mT for samples, and the appearance of a Hcenter with a positive H center is indicative of the samples having obvious ferromagnetism. The incorporated Mn ions are in a 2+ ionic state (i.e., Mn2+) because Mn2+ with a spin state of S = 5/2 typically exhibits a magnetic resonance with g ≈ 2 when Mn is doped into semiconductors.

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References

  1. S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64, 1678 (1994).

    ADS  Google Scholar 

  2. S. Nakamura, Jpn. J. Appl. Phys. 35, L74 (1996).

  3. H. Munekata, et al., Phys. Rev. Lett. 63, 1849 (1989).

    Article  ADS  Google Scholar 

  4. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno and K. Ohtani, Nature 408, 944 (2000) and references therein.

    Article  ADS  Google Scholar 

  5. T. Dietl, H. Ohno, F. Matsukura, J. Cibert and D. Ferrand, Science 287, 1019 (2000); T. Dietl, H. Ohno and F. Matsukura, Phys. Rev. B 63, 195205 (2001).

    Article  ADS  Google Scholar 

  6. M. Zajac et al., Appl. Phys. Lett. 78, 1276 (2001).

    Article  ADS  Google Scholar 

  7. G. T. Thaler et al., Appl. Phys. Lett. 80, 3964 (2002).

    Article  ADS  Google Scholar 

  8. Y. Shon, Y. H. Kwon, Sh. U. Yuldashev, J. H. Lim, C. S. Park, D. J. Fu, H. J. Kim, T. W. Kang and X. J. Fan, Appl. Phys. Lett. 81, 1845 (2002).

    Article  ADS  Google Scholar 

  9. K. Ando, Appl. Phys. Lett. 82, 100 (2003).

    Article  ADS  Google Scholar 

  10. J. Kim, F. Ren, G. T. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. M. Zavada and R. G. Whilson, Appl. Phys. Lett. 82, 1565 (2003).

    Article  ADS  Google Scholar 

  11. M. Marques, L. K. Teles, L. M. R. Scolfaro, J. Furthmüller, F. Bechstedt and L. G. Ferreira, Appl. Phys. Lett. 86, 164105 (2005).

    Article  ADS  Google Scholar 

  12. J. M. Baik, Y. Shon, T. W. Kang and J.-L. Lee, Appl. Phys. Lett. 87, 42105 (2005).

    Article  Google Scholar 

  13. D. P. Norton, S. J. Pearton, A. F. Hebard, N. Theodoropoulou, L. A. Boatner and R. G. Wilson, Appl. Phys. Lett. 82, 239 (2003).

    Article  ADS  Google Scholar 

  14. S. Lee, Y. Shon, S.-W. Lee, S. J. Hwang, H. S. Lee, T. W. Kang and D. Y. Kim, Appl. Phys. Lett. 88, 212513 (2006).

    Article  ADS  Google Scholar 

  15. K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. Part 2 40, L485 (2001).

    Article  ADS  Google Scholar 

  16. P. Boguslawski, E. L. Briggs and J. Bernhole, Phys. Rev. B 51, 17255 (1995).

    Article  ADS  Google Scholar 

  17. I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira, U. Tisch and J. Salzman, Phys. Rev. B 59, 9748 (1999).

    Article  ADS  Google Scholar 

  18. J. Kreissl, W. Ulrici, M. El-Metoui, A-M. Vasson, A. Vasson and A. Gavaix, Phys. Rev. B 54, 10508 (1996).

    Article  ADS  Google Scholar 

  19. J. Schneider, U. Kaufmann, W. Wilkening, M. Baeumler and F. Kohl, Phys. Rev. Lett. 59, 240 (1987).

    Article  ADS  Google Scholar 

  20. J. Szczytko, A. Twardowski, K. Swiatek, M. Palczewska, M. Tanaka, T. Hayashi and K. Ando, Phys. Rev. B 60, 8304 (1999).

    Article  ADS  Google Scholar 

  21. H. Shen, Y. Makita, S. Niki, A. Yamada, T. Lida, H. Shibata and A. Obara, Appl. Phys. Lett. 63, 1780 (1993).

    Article  ADS  Google Scholar 

  22. Y. Shon et al., J. Appl. Phys. 96, 7022 (2004).

    Article  ADS  Google Scholar 

  23. Y. Kim, Y. Shon, T. Takamasu and H. Yokoi, Phys. Rev. B 71, 73308 (2005).

    Google Scholar 

  24. L. Eaves, A. W. Smith, M. S. Skolnick and B. Cockayne, J. Appl. Phys. 53, 4955 (1982).

    Article  ADS  Google Scholar 

  25. Y. Shon et al., Appl. Phys. Lett. 84, 2310 (2004).

    Article  ADS  Google Scholar 

  26. P. Poddar, Y. Sahoo, H. Srikanth and P. N. Prasad, Appl. Phys. Lett. 87, 062506 (2005).

    Article  ADS  Google Scholar 

  27. Y. Shon et al., Appl. Phys. Lett. 85, 1763 (2004).

    Article  Google Scholar 

  28. Y. Shon et al., J. Cryst. Growth 281, 501 (2005).

    Article  ADS  Google Scholar 

  29. Y. Shon et al., Appl. Phys. Lett. 89, 041905 (2006).

    Google Scholar 

  30. Y. Shon et al., J. of Luminescence 154, 593 (2014).

    Article  ADS  Google Scholar 

  31. R. Y. Korotkov, J. M. Gregie, B. Han and B. W.Wessels, Phys. E 308, 30 (2001).

    ADS  Google Scholar 

  32. T. Graf, M. Gjukic, M. S. Brandt, M. Stutzmann and O. Ambacher, Appl. Phys. Lett. 81, 5159 (2002).

    Article  ADS  Google Scholar 

  33. M. Hashimoto, Y. K. Zhou, M. Kanakura and H. Asahi, Sol. State Commun. 122, 37 (2002).

    Article  ADS  Google Scholar 

  34. R. Heitz, P. Maxim, L. Eckey, P. Thurian, A. Hoffmann, I. Broser, K. Pressel and B. K. Meyer, Phys. Rev. B 55, 4383 (1997).

    Article  ADS  Google Scholar 

  35. W. Chen et al., J. Appl. Phys. 89, 1120 (2001).

    Article  ADS  Google Scholar 

  36. C. S. Yoon et al., J. Appl. Phys. 98, 083902 (2005).

    Google Scholar 

  37. S. Lee et al., Appl. Phys. Lett. 96, 042115 (2010).

    Article  MATH  ADS  Google Scholar 

Download references

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Authors and Affiliations

  1. Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, Seoul, 100-715, Korea

    J. W. Lee, Yoon Shon & N. G. Subramaniam

  2. Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul, 133-791, Korea

    C. S. Park & E. K. Kim

  3. Department of Semiconductor Science, Dongguk University, Seoul, 100-715, Korea

    Hyunsik Im

  4. Department of Physics, Dongguk University, Seoul, 100-715, Korea

    H. S. Kim

Authors
  1. J. W. Lee
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  2. Yoon Shon
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  3. N. G. Subramaniam
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  4. C. S. Park
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  5. E. K. Kim
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  6. Hyunsik Im
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Correspondence to Yoon Shon.

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Lee, J.W., Shon, Y., Subramaniam, N.G. et al. Relevant characteristics of undoped GaMnN grown by using molecular beam epitaxy. Journal of the Korean Physical Society 67, 541–546 (2015). https://doi.org/10.3938/jkps.67.541

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  • DOI: https://doi.org/10.3938/jkps.67.541

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