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“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?
“Rule 07” was proposed 2 years ago as a convenient rule of thumb to estimate the dark current density for state-of-the-art planar, ion-implanted, p / n ...
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Molecular Dynamics Simulation of MBE Growth of CdTe/ZnTe/Si
We simulate in three dimensions molecular beam epitaxial (MBE) growth of CdTe/ZnTe/Si using classical molecular dynamics. Atomic interactions are...
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Growth of HgTe Quantum Wells for IR to THz Detectors
We zone-engineered HgCdTe/HgTe/HgCdTe quantum wells (QWs) using the molecular-beam epitaxy (MBE) method with in situ high-precision ellipsometric...
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Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe
The very long infrared wavelength (>14 μ m) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays...
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Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique
Dislocations are known to influence the electrical and optical properties of long-wavelength infrared (LWIR) HgCdTe detectors and have been shown to...
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Type-II InAs/GaSb Superlattice Photon Detectors
In the previous two chapters, the basic concept of photodetectors and examples for photon detector families were briefly described. Among the...
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A Novel Stress Characterization Technique for the Development of Low-Stress Ohmic Contacts to HgCdTe
HgCdTe material intended for long-wavelength infrared detection is particularly susceptible to damage from stress. As a result, an ideal ohmic...
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Strained and Unstrained Layer Superlattices for Infrared Detection
Strained HgTe/CdZnTe or InAs/GaInSb, and essentially unstrained HgTe/CdTe superlattices (SLs), are possible materials systems for implementation in...
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Flexibility of p–n Junction Formation from SWIR to LWIR Using MBE-Grown Hg(1–x)Cd x Te on Si Substrates
In this paper, we show the versatility of using molecular-beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt...
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Status of LWIR HgCdTe-on-Silicon FPA Technology
The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because...
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Electromagnetic Modeling of n-on-p HgCdTe Back-Illuminated Infrared Photodiode Response
The mercury cadmium telluride (MCT) photodiode is a well-known detector for infrared (IR) sensing. Its growth (mainly liquid phase epitaxy (LPE)) and...
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LWIR HgCdTe Detectors Grown on Ge Substrates
Long-wavelength infrared (LWIR) HgCdTe p -on- n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge...
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Numerical Analysis of a Very Long-Wavelength HgCdTe Pixel Array for Infrared Detection
In this paper we present numerical simulations of pixel arrays for detection of very long-wavelength (≥14 μ m) infrared radiation. The drift-diffusion...
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Effect of Dislocations on VLWIR HgCdTe Photodiodes
The effects of dislocations on very-long-wavelength infrared (VLWIR) HgCdTe photodiodes (cutoff wavelength >14 μ m at 40 K) have been determined...
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From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n −/p Ion Implantation Technology
This paper aims at studying the feasibility of very long infrared wavelength (VLWIR) (12–18 μ m) focal plane arrays using n- on -p planar ion-implanted...
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Status of HgCdTe Bicolor and Dual-Band Infrared Focal Arrays at LETI
In this paper we show the latest achievements of HgCdTe-based infrared bispectral focal plane arrays (FPAs) at LETI infrared laboratory. We present...
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VLWIR HgCdTe detector current-voltage analysis
This article details current-voltage characteristics for a very long wavelength infrared (VLWIR) Hg 1− x Cd x Te detector from Raytheon Vision Systems...
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Compositionally graded interface for passivation of HgCdTe photodiodes
A compositionally graded CdTe-Hg 1−x Cd x Te interface was created by deposition of CdTe on p-HgCdTe and subsequent annealing. The compositionally graded...
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Realization of very long wavelength infrared photovoltaic detector arrays on mercury cadmium telluride epitaxial layers grown on Si substrates
This paper proposes a development of n-on-p structures for realizing very long wavelength infrared (VLWIR) detector arrays on mercury cadmium...
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LWIR HgCdTe on Si detector performance and analysis
We have fabricated a series of 256 pixel×256 pixel, 40 µm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using...