Abstract
This paper proposes a development of n-on-p structures for realizing very long wavelength infrared (VLWIR) detector arrays on mercury cadmium telluride (HgCdTe) epitaxial layers grown on Si substrates. It is shown from a comparative study of zero-bias resistance-area product (R0A) of diodes in n-on-p and p-on-n configurations that the n-on-p structure has promising potential to control contribution of dislocations, without actually reducing dislocation density below the current level (mid-106 cm−2) of HgCdTe/Si material technology. The resulting gain will be in terms of both higher numerical magnitudes of R0A and its reduced scatter.
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Gupta, S., Gopal, V. & Tandon, R.P. Realization of very long wavelength infrared photovoltaic detector arrays on mercury cadmium telluride epitaxial layers grown on Si substrates. J. Electron. Mater. 35, 2056–2060 (2006). https://doi.org/10.1007/s11664-006-0313-8
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DOI: https://doi.org/10.1007/s11664-006-0313-8