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Author Correction: High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip
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Article
High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip
Direct phase modulation is one of the most urgent and difficult issues in the terahertz research area. Here, we propose a new method employing a two-dimensional electron gas (2DEG) perturbation microstructure ...
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Article
The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors
The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by com...
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Article
Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes
In this study, we investigated the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes using the measured capacitance–voltage (C–V) and...
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Article
Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
From the capacitance–voltage curves and current–voltage characteristics of the In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors (HFETs) with side-Ohmic contacts and normal-Ohmic contacts, two-dimens...