Abstract
From the capacitance–voltage curves and current–voltage characteristics of the In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors (HFETs) with side-Ohmic contacts and normal-Ohmic contacts, two-dimensional electron gas (2DEG) electron mobility was calculated. It is found that the polarization Coulomb field scattering (PCF) is closely related to the normal-Ohmic contact processing, and the PCF was weakened by side-Ohmic contact processing in In0.17Al0.83N/AlN/GaN HFETs, similar to that in AlGaN/AlN/GaN HFET devices. Further, due to the stronger spontaneous polarization in the thinner In0.17Al0.83N barrier layer, the influence of the gate bias on the PCF in In0.17Al0.83N/AlN/GaN HFETs is greater than that in AlGaN/AlN/GaN HFETs. As a result, the PCF in In0.17Al0.83N/AlN/GaN HFETs with side-Ohmic contacts is stronger than that in AlGaN/AlN/GaN HFETs with side-Ohmic contacts. Moreover, the 2DEG electron density in the In0.17Al0.83N/AlN/GaN HFETs with side-Ohmic contacts is increased by more than twice compared with the 2DEG electron density in the In0.17Al0.83N/AlN/GaN HFETs with normal-Ohmic contacts.
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Acknowledgments
This work was supported by the National Natural Science Foundation of China (Grant No. 11174182), the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20110131110005) and Graduate Independent Innovation Foundation of Shandong University, GIIFSDU (Grant No. yzc12064). The authors would like to thank Dr. Wu Lu from Ohio State University for useful discussions.
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Luan, C., Lin, Z., Lv, Y. et al. Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors. Appl. Phys. A 116, 2065–2075 (2014). https://doi.org/10.1007/s00339-014-8403-6
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DOI: https://doi.org/10.1007/s00339-014-8403-6