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Article
Open AccessA novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurement...
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Article
The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors
E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) of various sizes were fabricated, and their parasitic source resistance (RS) was measured. The measurement results showed that RS varied gre...
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Article
Association between CFH single nucleotide polymorphisms and response to photodynamic therapy in patients with central serous chorioretinopathy
To evaluate the association between single nucleotide polymorphisms (SNPs) in the complement factor H (CFH) gene and response to PDT in patients with CSC.
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Article
Open AccessEffect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs
This research presents the first experimental observation of the enhancement of the polarization Coulomb field (PCF) scattering by aggressive lateral scaling of GaN HEMTs. By decreasing the source-drain distan...
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Article
Open AccessEffect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to ...
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Article
Effect of gate–source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
In this paper, the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate–source spacings were fabricated. Using the measured parasitic source access resistance and the scattering theor...
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Article
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation
In this paper, the detailed device characteristics were investigated both before and after the Si3N4 passivation grown by plasma-enhanced chemical vapor deposition (PECVD). Better transport properties have been o...
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Article
Open AccessImproved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors
The single-tone power of the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths was measured. A distinct improvement in device linearity was observed in the sample with a lar...
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Article
Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
In this study, we have investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with floating gate structures using the measured capacitancevoltage (C-V) and...
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Article
The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors
The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by com...
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Article
Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes
In this study, we investigated the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes using the measured capacitance–voltage (C–V) and...
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Article
Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
From the capacitance–voltage curves and current–voltage characteristics of the In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors (HFETs) with side-Ohmic contacts and normal-Ohmic contacts, two-dimens...
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Article
Open AccessInfluence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
Using measured capacitance-voltage curves with different gate lengths and current–voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) o...
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Article
Influence of the ring-ring interaction in Se8-ring clusters on their absorption
Abstracts are not published in this journal
