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337 Result(s)
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Article
Hydrogen Induced Defects at Silicon Surfaces and Buried Epitaxial Misfit Dislocation Interfaces
A silicon epitaxial structure containing spatially confined arrays of misfit dislocations has been used in order to investigate the interaction between hydrogen and individual extended defects. Hydrogen was in...
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Article
Interface crack between two elastic layers
A semi-infinite interface crack between two infinite isotropic elastic layers under general edge loading conditions is considered. The problem can be solved analytically except for a single real scalar indepen...
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Article
Study of the Mössbauer effect on rare-earth borided surface layers on pure iron
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Article
Crystallization studies of electron beam-deposited telluride films
This paper reports on the characterization of the crystallization of Ge-Te and Ge-Sb-Te films by several methods. The electron beam-deposited films, usually amorphous, were crystallized by oven-heating, laser ...
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Article
Kinetics of Ordering in Cu3Au: An Atomistic Approach
We study the kinetics of ordering in Cu3Au using a model Hamiltonian derived from the effective medium theory of chemical bonding. Monte Carlo simulations are used to investigate universal and non-universal featu...
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Article
Vibrating reed study of the flux line dissipation of ceramic and single-crystal (Ba, K)BiO3
Vibrating reed (VR) and dc and ac magnetic susceptibility measurements were performed on a nominal single crystal of composition (Ba0.64K0.36)BiO3 in an applied magnetic fieldH. Field-cooling and field-sweep data...
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Article
Kinetics of a non-catalytic gas-solid chemical reaction under SHS-like conditions
Nitration of metallic tantalum under self-propagating high-temperature synthesis (SHS) conditions (i.e. rapid heating rates 2000–3000 Ks−1, and short heating periods 2–100 s) has been studied. Phase analysis and ...
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Article
Crystal Defects In GaN on (0001) Sapphire
Defect structures in GaN thin films grown on (0001) sapphire have been studied using a combination of different transmission electron microscopy (TEM) techniques. Two fundamentally different types of defects a...
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Chapter and Conference Paper
Structural Differences of Superconducting and Non-Superconducting PrBa2Cu3Ox Crystals
Structural differences of PrBa2Cu3Ox crystals grown by TSFZ and flux methods were investigated using single crystal X-ray diffraction method, to make clear the origin of their different electrical properties. Obv...
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Chapter and Conference Paper
Magnetic Characteristics of the Superconducting TSFZ PrBa2Cu3Oy Crystal
We present the results of a detailed magnetic characteristics on superconducting PrBa2Cu3Ox (PrBCO) single crystals in applied magnetic fields up to 0.5 T. The PrBCO single crystals were grown by the travelling-s...
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Chapter and Conference Paper
Crystal Growth of PrBa2Cu3O7-y
Crystals of PrBa2Cu307-y have been grown by the travelling-solvent floating-zone (TSFZ) method and slow-cooling. The grown crystals were identified to be single crystal of PrBa2Cu307-y by Laue X-ray measurements,...
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Chapter
Microstructural Studies of Strontium Titanate Dielectric Ceramics
Perovskites are an important family of materials. Devices based on SrTiO3 and BaTiO3 are particularly important for a number of electronic applications. Depending on the way in which the materials are processed, ...
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Chapter
Phototorefractive Spatial Solitons
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Article
Preparation and magnetic properties of In2 − xZnxCu2O5 (x = 0–1.4) solid solution
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Article
Examination of the Extinguishment Performance of a Water Mist System Using Continuous and Cycling Discharges
We conducted a series of full-scale fire tests of a twin-fluid water mist system in an empty enclosure and in a simulated machinery space. During the tests, two water mist discharge modes, continuous and cycli...
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Article
A dual composite of WC-Co
Hardness, fracture toughness, and wear resistance are strongly inter-related properties of cemented tungsten carbide. Higher hardness usually dictates higher wear resistance but at the cost of fracture toughne...
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Article
Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
Selective lateral growth of GaN is a promising technique for producing high quality material for microelectronic and optoelectronic devices. Single-crystal GaN/AlN layers have been grown on Si(111) substrates ...
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Article
Compositional dependence of crystallization in the glass-ceramics system Bi2O3-In2O3-MnO2-B2O3
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Chapter
Observation of Induced Modulation Instability of an Incoherent Optical Beam
We observe induced modulation instability (MI) of a partially spatially incoherent beam by seeding noise through cross-phase-modulation. Experiments revealed the existence of a threshold for such induced incoh...
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Article
Cost-effective yttrium doped ceria-based composite ceramic materials for intermediate temperature solid oxide fuel cell applications