Crystal Defects In GaN on (0001) Sapphire

Abstract

Defect structures in GaN thin films grown on (0001) sapphire have been studied using a combination of different transmission electron microscopy (TEM) techniques. Two fundamentally different types of defects are found in these films. Planar defects which lie on planes perpendicular to the growth surface are common. In some regions of the films, other planar defects are present which run parallel to the surface of the substrate. The terminology used to describe these different defects varies quite widely in the literature and includes combinations of antiphase (inversion) domain boundaries and stacking faults. The second type of defect is generally referred to as a threading dislocation since many thread through the whole thickness of the film. Dislocations with different Burgers vectors have been identified in this work and in previous studies; these dislocations usually have a component of their Burgers vector lying normal to the (0001) plane. The overall defect structures in these films have been characterized using conventional bright-field and dark-field imaging. The detailed structure of the individual defects have been examined using weak-beam microscopy both in plan view and in cross section. This paper illustrates the different types of defects, both planar and linear, compares them to defects which have been characterized more thoroughly in related materials, and discuss the nomenclature of the different defect configurations.