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    Article

    Sulfurized Passivation of GaAs(100) Surfaces

    We have developed a new electrochemical passivation method to obtain a quite stable sulfide layer on GaAs surface. This layer is very thick and contains a mixture of Ga, As, S, O and H compounds. The photolumi...

    Z. S. Li, X. Y. Hou, W. Z. Cai, W. Wang, M. Zhang in MRS Online Proceedings Library (1992)

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    Article

    Formation and Electronic Structure of the Mn/GaAs(100) Interface

    Formation and electronic structure of the Mn/GaAs(100) interface grown at room temperature are studied by photoemission. The growth at early stage is identified to be in two-dimensional mode. The chemical reac...

    X. **, M. Zhang, G. S. Dong, Z. S. Li, Xun Wang in MRS Online Proceedings Library (1992)

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    Article

    Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate

    A new sulfur passivation technique for GaAs surface by using S2Cl2 instead of (NH4)2Sx has been developed. Auger electron spectroscopy verifies the passivated surface is almost completely free of oxygen. The resu...

    W. Z. Cai, Z. S. Li, J. Wang, Aziz Ul-Haq Qureshi in MRS Online Proceedings Library (1993)

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    Article

    Modelling of Multi-Ion-Beam Reactive Cosputtering for Metal Oxide Thin Films

    Very recently a new technique named multi-ion-bram reactive cosputtering(MIBRECS) was developed for preparing multi-component metal oxide thin films. Epitaxial or highly oriented (Pb,La) TiO3 thin films sputtered...

    D. Q. **ao, J. G. Zhu, Z. H. Qian, W. B. Peng, L. F. Wei in MRS Online Proceedings Library (1994)

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    Article

    Direct measurement of electrical conductance through a self-assembled molecular layer

    The self-assembly of organic molecules on surfaces is a promising approach for the development of nanoelectronic devices1,2. Although a variety of strategies have been used to establish stable links between molec...

    F. Song, J. W. Wells, K. Handrup, Z. S. Li, S. N. Bao, K. Schulte in Nature Nanotechnology (2009)