SpringerLink
Log in

Sulfurized Passivation of GaAs(100) Surfaces

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We have developed a new electrochemical passivation method to obtain a quite stable sulfide layer on GaAs surface. This layer is very thick and contains a mixture of Ga, As, S, O and H compounds. The photoluminescence (PL) spectrum of such anodic sulfurized GaAs surface shows big intensity enhancement as compared with that of as-etched GaAs samples; No visual intensity decay occurs under laser beam illumination, which maintains for more than seven months. The structure and composition of the passivation layers are investigated by the X-ray photoelectron spectroscopy and the mechanism of the layer formation is suggested.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price includes VAT (Germany)

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C. J. Sandroff, R. N. Nottenberg, J. C. Bischoff and R. Bhat, Appl. Phys. Lett. 51, 33 (1987).

    Article  CAS  Google Scholar 

  2. M. S. Carpenter, M. R. Melloch, and T. E. Dungan, Appl. Phys. Lett 53, 66 (1988).

    Article  CAS  Google Scholar 

  3. Jia-Fa Fan, Haruhiro Oigawa and Yasuo Nannichi, Jpn. J. Appl. Phys. 27, L2125 (1988)

    Article  CAS  Google Scholar 

  4. M. S. Carpenter, M. R. Melloch, B. A. Cowans, Z. Dardas and W. N. Delgass, J. Vac. Sci. Technol. B7, 845 (1989).

    Article  Google Scholar 

  5. M. S. Carpenter, M. R. Melloch and M. S. Lundstrom, Appl. Phys. Lett 52, 2157 (1988).

    Article  CAS  Google Scholar 

  6. H. Oigawa, J. Fan, Y. Nannichi, K. Ando, K. Saiki, and A. Koma, in: Extended Abstracts of the 20th International Conference on Solid State Devices and Materials (The Japan Society of Applied Physics, Tokyo, 1988) p.263.

    Google Scholar 

  7. C. J. Spindt and W. E. Spicer, Proc. 12th State-of-the-art Program on compound semiconductors, edited by D. C. D’Avanzo, R. E. Enstrom, A. T. Macrander and D. DeCoster, (The Electrochemical Society. INC, 1990) p 3.

  8. Z. S. Li, X. Y. Hou, W. Z. Cai, M. Zhang, G. S. Dong, X. **, X. M. Ding and Xun Wang, Proceeding of the 21st International Conference on Physics of Semiconductors, (in press)

  9. H. Sugahara, M. Oshima, R. Klauser, H. Oigawa and Y. Nannichi, Surf. Sci. 242, 335.

Download references

Author information

Authors and Affiliations

  1. Surface Physics Laboratory, Fudan University, Shanghai, 200433, China

    Z. S. Li, X. Y. Hou, W. Z. Cai, W. Wang, M. Zhang, G. S. Dong, X. ** & Xun Wang

Authors
  1. Z. S. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. X. Y. Hou
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. W. Z. Cai
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. W. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. G. S. Dong
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. X. **
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Xun Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Li, Z.S., Hou, X.Y., Cai, W.Z. et al. Sulfurized Passivation of GaAs(100) Surfaces. MRS Online Proceedings Library 284, 607–612 (1992). https://doi.org/10.1557/PROC-284-607

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-284-607

Search

Navigation