SpringerLink
Log in

Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

A new sulfur passivation technique for GaAs surface by using S2Cl2 instead of (NH4)2Sx has been developed. Auger electron spectroscopy verifies the passivated surface is almost completely free of oxygen. The results of X-ray photoelectron spectroscopy indicate a relatively strong bonding between S and substrate atoms. A clean surface can be achieved by annealing in vacuum at 600°C. ZnSe thin films grown by hot wall epitaxy on S2Cl2 passivated GaAs show improved crystalline quality compared with those treated by conventional method, as indicated by Raman scattering measurements.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price includes VAT (Germany)

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Krost, W. Richter, D. R. T. Zahn, K. Hingerl and H. Sitter, Appl. Phys. Lett. 57, 1981 (1990).

    Article  CAS  Google Scholar 

  2. D. Li, M. Gonsalves, N. Otsuka, J. Qiu, M. Kobayashi and R. L. Gunshor, Appl. Phys. Lett. 57, 449 (1990).

    Article  CAS  Google Scholar 

  3. R. L. Gunshor, M. Kobayashi, N. Otsuka and A. V. Nurmikko, J. Cryst. Growth, 115, 652 (1991).

    Article  CAS  Google Scholar 

  4. S. Guha, M. Munekata, F. K. LeGoues and L. L. Chang, Appl. Phys. Lett. 60, 3220 (1992).

    Article  CAS  Google Scholar 

  5. Z. S. Li, W. Z. Cai, X. Y. Hou, R. Z. Su, X. M. Ding and Xun Wang, to be published.

  6. C. J. Spindt, D. Liu, K. Miyano, P. L. Meissner, T. T. Chiang, T. Kendelewiwz, I. Lindau and W. E. Spicer, Appl. Phys. Lett. 55, 861 (1989).

    Article  CAS  Google Scholar 

  7. R. Loudon, Adv. Phys., 13, 423 (1964).

    Article  CAS  Google Scholar 

  8. K. Hingerl and H. Sitter, J.Cryst. Growth, 101, 180 (1990).

    Article  CAS  Google Scholar 

  9. O. Pages, M. Renucci, O. Briot, N. Tempier and R. L. Aulombard, J. tryst. Growth, 107, 670 (1991).

    Article  CAS  Google Scholar 

  10. J. Wang, W. H. Yao, J. B. Wang, H. Q. Lu, H. H. Sun, X. Wang and Z. L. Pang, Appl. Phys. Lett. 62, 2845 (1993)

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Surface Physics Laboratory and Fudan T. D. Lee Physics Laboratory, Fudan University, Shanghai, 200433, China

    W. Z. Cai, Z. S. Li, J. Wang, Aziz Ul-Haq Qureshi & Xun Wang

Authors
  1. W. Z. Cai
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Z. S. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Aziz Ul-Haq Qureshi
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Xun Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Cai, W.Z., Li, Z.S., Wang, J. et al. Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate. MRS Online Proceedings Library 326, 335–339 (1993). https://doi.org/10.1557/PROC-326-335

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-326-335

Search

Navigation