-
Article
Direct measurement of electrical conductance through a self-assembled molecular layer
The self-assembly of organic molecules on surfaces is a promising approach for the development of nanoelectronic devices1,2. Although a variety of strategies have been used to establish stable links between molec...
-
Article
Modelling of Multi-Ion-Beam Reactive Cosputtering for Metal Oxide Thin Films
Very recently a new technique named multi-ion-bram reactive cosputtering(MIBRECS) was developed for preparing multi-component metal oxide thin films. Epitaxial or highly oriented (Pb,La) TiO3 thin films sputtered...
-
Article
Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate
A new sulfur passivation technique for GaAs surface by using S2Cl2 instead of (NH4)2Sx has been developed. Auger electron spectroscopy verifies the passivated surface is almost completely free of oxygen. The resu...
-
Article
Sulfurized Passivation of GaAs(100) Surfaces
We have developed a new electrochemical passivation method to obtain a quite stable sulfide layer on GaAs surface. This layer is very thick and contains a mixture of Ga, As, S, O and H compounds. The photolumi...
-
Article
Formation and Electronic Structure of the Mn/GaAs(100) Interface
Formation and electronic structure of the Mn/GaAs(100) interface grown at room temperature are studied by photoemission. The growth at early stage is identified to be in two-dimensional mode. The chemical reac...