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Article
Intelligent edge content caching: A deep recurrent reinforcement learning method
With the rise of 5G network and the rapid growth of user equipment, there exists a gap between the stringent requirements of emerging applications and the actual functionality of the Internet. In particular, t...
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Article
Microstructure, Tensile Properties, and Wear Resistance of In Situ TiB2/6061 Composites Prepared by High Energy Ball Milling and Stir Casting
In-situ synthesized TiB2/6061 composites were prepared from Al-K2TiF6-KBF4 by high energy ball milling and stir casting. Phase analysis and microstructure observation of the samples were characterized by XRD, SEM...
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Article
Open AccessMicroRNA-326-5p enhances therapeutic potential of endothelial progenitor cells for myocardial infarction
Our study sought to investigate the therapeutic effects and mechanisms of miR-326-5p-overexpressing endothelial progenitor cells (EPCs) on acute myocardial infarction (AMI).
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Article
Wls Expression Correlates with Tumor Differentiation and TNM Stage in Hepatocellular Carcinoma
Hepatocellular carcinoma (HCC) is an aggressive cancer with a poor prognosis. Effective biomarkers are necessary to predict the clinical course and outcome of patients with HCC. Wntless (Wls) is a key modulato...
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Chapter and Conference Paper
The Mechanism of Apoptosis in Adenocarcinoma of Lung Cancer A549 Cells Induced by Albumin-Derived from Peanut
Peanut albumin which possesses protease inhibitor activity could be used as an anticancer regent. This paper would discuss the effect and mechanism of apoptosis induced by peanut albumin on human adenocarcinom...
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Article
Activation of Beryllium-Implanted GaN by Two-Step Annealing
For the first time, p-type do** through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), follow...
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Article
Activation of Beryllium-Implanted GaN by Two-Step Annealing
For the first time, p-type do** through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), follow...