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  1. No Access

    Article

    Low temperature growth and planar do** of ZnSe in a plasma-stimulated LP-MOVPE system

    In a low-pressure metalorganic vapor phase epitaxy process, we used dc-plasma activated nitrogen to dope ZnSe, grown with ditertiarybutylselenide and dimethylzinc-triethylamine. The nitrogen concentration of u...

    W. Taudt, B. Wachtendorf, F. Sauerländer, H. Hamadeh… in Journal of Electronic Materials (1995)

  2. No Access

    Article

    Optical and electrical properties of annealed ZnSe:N grown by metalloorganic vapor phase epitaxy

    A. L. Gurskii, K. Vakarelska, W. Taudt, M. Heuken in Journal of Applied Spectroscopy (1996)