Abstract
In a low-pressure metalorganic vapor phase epitaxy process, we used dc-plasma activated nitrogen to dope ZnSe, grown with ditertiarybutylselenide and dimethylzinc-triethylamine. The nitrogen concentration of up to 2 × 1018 cm−3 in the doped layers can be adjusted by the growth temperature, the dc-plasma power, and the N2 dopant flow. Due to the high n-type background carrier concentration of the order of 1017 cm−3 in undoped samples, the doped layers show n-type conductivity or were semi-insulating because of an additional compensation by hydrogen incorporated with a concentration of the order of 1018 cm−3. A planar do** scheme was applied to reduce this hydrogen incorporation by one order of magnitude, although H2 was used as carrier gas.
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Taudt, W., Wachtendorf, B., Sauerländer, F. et al. Low temperature growth and planar do** of ZnSe in a plasma-stimulated LP-MOVPE system. J. Electron. Mater. 24, 1671–1675 (1995). https://doi.org/10.1007/BF02676830
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DOI: https://doi.org/10.1007/BF02676830