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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

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    High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

    Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown...

    M.J. Jurkovic, L.K. Li, B. Turk, W.I. Wang… in MRS Internet Journal of Nitride Semiconduc… (2000)

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