44 Result(s)
within
V. V. Amelichev
English
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Article
Investigation of Test Cells of Nonvolatile Magnetoresistive Memory
A new generation of nonvolatile memory devices are being actively developed and researched. The MRAM test cell is manufactured by Scientific-Manufacturing Complex “Technological Centre.” A control measuring sy...
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Article
Magnetic Energy of Interaction between a Synthetic Antiferromagnet and a Free Layer of a Spin-Tunnel Element
An exact expression is found for the magnetostatic energy of interaction of a synthetic antiferromagnet with a free layer of a spin-tunnel element and ferromagnetic layers in the shape of strongly oblate ellip...
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Article
Influence of the Shape of a Spin-Tunnel Element on the Dependence of Its Magnetoresistance
A theoretical and experimental study of the dependence of the magnetoresistance for two spin-tunnel junctions (STJs) of ellipsoidal shape has been made. The one-sided homogeneous magnetization reversal mode of...
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Article
Mechanical Stresses and Magnetic Properties of NiFe and CoNiFe Films Obtained by Electrochemical Deposition
Magnetic films of NiFe permalloy and CoNiFe ternary alloy are used in products of nanoelectronics and microelectronics and in densely packed magnetic memory. NiFe and CoNiFe coatings decrease corrosion and wea...
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Article
Theoretical Study of the Magnetoresistance of a Square Straintronic Element
The change in magnetoresistance upon remagnetization by an external magnetic field is calculated using the model of coherent rotation of the magnetization vector of the free layer of a spin tunnel element subj...
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Change in the Magnetoresistance of a Spin Tunnel Element upon Inhomogeneous Magnetization Reversal with the Formation of Domains
Typical experimental dependences of the giant magnetoresistance of a spin tunnel element are compared to theoretical curves obtained using the classical Stoner–Wohlfarth theory of coherent magnetization revers...
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Article
FeNiCo/CoFe Multilayer Nanostructures for Magnetic Straintronics
Results are presented from experimental studies of multilayer periodic Ta/[FeNiCo/CoFe]х/Ta nanostructures to supplement scientific knowledge in the field of magnetic straintronics. The electrophysical parameters...
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Article
Study of the Sensitivity of Porous SnO2-Based Thick-Film Elements to the Hydrogen Concentration in Air
Semiconductor gas sensors based on metal oxides are sensitive and fast with low power consumption. The specific features of the manufacturing technology of such transducers make it possible to reduce their ove...
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Article
Domain Structure in Thin FeNiCo Films with In-Plane Anisotropy
A theoretical model of the distribution of magnetization is developed using the Landau–Lifshitz domain structure experimentally established in thin FeNiCo films with uniaxial anisotropy and drawing on the Néel...
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Article
Investigating the Field of Stable Operation of Magnetoresistive Memory Elements
A study is performed of the region of stable operation of parts of magnetoresistive storage elements, allowing for the field of the inhomogeneity of the fixing nanomagnetic strip. The coefficient of magnetosta...
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Article
Study of Spin-Tunnel Junction Magnetization Using Coherent Rotation of the Free Layer Magnetization Model
The influence of a magnetic field directed orthogonal to the easy magnetization axis (EMA) of an elliptical spin-tunnel junction based on the Ta/CoFe/CoFeB/MgO/CoFeB/Ru/CoFe/FeMn/Ta structure on the dependence...
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Article
Magnetostrictive Properties of Periodic Nanostructures Based on CoFe/FeNiCo
Results are presented from experimental studies of the magnetostrictive and magnetoresistive properties of a multilayer Ta/[FeNiCo/CoFe]6/Ta nanostructure formed on an oxidized silicon substrate. The effect contr...
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Article
Features of Calculation and Investigation of Volt–Oersted Characteristics of an Anisotropic Magnetoresistive Sensor
We present the results of experimental and theoretical studies of the influence on the characteristics of anisotropic magnetoresistive magnetic field sensors based on FeNiCo alloy with a “barber-pole” structur...
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Article
Synthetic Antiferromagnetic Structures in Technology of Spintronic Devices
In this paper, we consider synthetic antiferromagnetic (SAF) structures and their influence in a fixed layer of a spin-tunnel junction on the magnitude of the magnetoresistive effect and temperature stability....
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Article
Features of the AMR Effect in Magnetic Strips with Perpendicular Anisotropy
A theoretical model is proposed for structures of collective micromagnetic spin in magnetoresistive FeNiCo nanostrips with perpendicular anisotropy. Atypical dependences of the magnetoresistance on the magnitu...
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Article
Magnetostriction Nanostructures with a Giant Magnetoresistive Effect for Magnetic Straintronics Devices
The results are presented from experimental studies of the magnetostrictive and magnetoresistive properties of a multilayer Ta/FeNiCo/CoFe/Cu/CoFe/FeNiCo/FeMn/Ta nanostructure formed on an oxidized silicon sub...
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Article
Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect
The modern designs of magnetic field transducers (MFTs) based on nanostructures with the spin-tunnel magnetoresistive effect (STMR) and the main areas of their application are considered. The results of an exp...
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Article
Condenser MEMS Microphone
The market for MEMS microphones is growing every year. The aggregate average annual growth rate is 11.7%. This is due to the increase in devices using voice control, the increase in the number of microphones i...
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Article
Finite Element Modeling of the Membrane Module
The design and size of the membrane module package have a significant impact on its characteristics. It is necessary to use the finite element modeling calculation of the frequency response of the membrane mod...
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Article
Magnetoresistive Features of a Long FeNiCo Nanostrip
A theory has been developed to interpret the experimental dependence of the magnetoresistance of a FeNiCo nanostrip on the external magnetic field. It assumes the one-dimensional nonuniformity of the magnetiza...
