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  1. No Access

    Article

    Magnetostrictive Properties of Periodic Nanostructures Based on CoFe/FeNiCo

    Results are presented from experimental studies of the magnetostrictive and magnetoresistive properties of a multilayer Ta/[FeNiCo/CoFe]6/Ta nanostructure formed on an oxidized silicon substrate. The effect contr...

    D. A. Zhukov, A. I. Krikunov… in Bulletin of the Russian Academy of Science… (2021)

  2. No Access

    Article

    Synthetic Antiferromagnetic Structures in Technology of Spintronic Devices

    In this paper, we consider synthetic antiferromagnetic (SAF) structures and their influence in a fixed layer of a spin-tunnel junction on the magnitude of the magnetoresistive effect and temperature stability....

    V. V. Amelichev, D. V. Vasilyev, A. I. Krikunov… in Nanobiotechnology Reports (2021)

  3. No Access

    Article

    Magnetostriction Nanostructures with a Giant Magnetoresistive Effect for Magnetic Straintronics Devices

    The results are presented from experimental studies of the magnetostrictive and magnetoresistive properties of a multilayer Ta/FeNiCo/CoFe/Cu/CoFe/FeNiCo/FeMn/Ta nanostructure formed on an oxidized silicon sub...

    D. A. Zhukov, A. I. Krikunov… in Bulletin of the Russian Academy of Science… (2020)

  4. No Access

    Article

    Combined Technology Fabrication of Spin-Valve Magnetoresistive Elements and Micromagnets

    We present the research results of the fabrication technology of magnetoresistive (MR) elements based on the multilayer spin-valve magnetoresistive (SVMR) Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Та nanostructures a...

    V. V. Amelichev, P. A. Belyakov, D. V. Kostyuk, D. V. Vasil’ev… in Technical Physics (2018)

  5. No Access

    Article

    Spin-tunneling magnetoresistive elements based on multilayered nanostructures

    The results of studies of characteristics of spin-tunneling magnetoresistive (STMR) elements fabricated from multilayered nanostructures using a mask technique have been considered. The parameters of magnetic ...

    V. V. Amelichev, P. A. Belyakov, D. V. Vasil’ev, D. A. Zhukov… in Technical Physics (2017)

  6. No Access

    Article

    Development of galvanic isolators on the basis of nanostructures from spin-valve magnetoresistive effect

    In article the basic is constructive-technological decisions applied in galvanic isolators (GI) with giant magnetoresistive by effect are considered. Results of research of spin-valve magnetoresistive (SVMR) n...

    P. A. Belyakov, D. V. Kostyuk, I. E. Abanin… in Automation and Remote Control (2016)

  7. No Access

    Article

    Magnetic anisotropy induced in the nanocrystalline FeZrN films prepared by oblique-angle magnetron sputtering

    Nanocrystalline Fe77Zr7N16 films are prepared by oblique-angle magnetron sputtering. The effect of the ion beam angle and subsequent annealing on the phase and structural states, the coercive force, the saturatio...

    E. N. Sheftel’, E. V. Kharin, V. A. Tedzhetov… in Russian Metallurgy (Metally) (2016)

  8. No Access

    Article

    Current in a system formed by a microprobe and a thin-film layered structure

    The current in a system formed by a conducting microprobe and a thin-film layered structure is experimentally studied. The possibility of a stable current flow with a density of up to 3 × 106 A/cm2 is demonstrate...

    S. G. Chigarev, A. I. Krikunov… in Journal of Communications Technology and E… (2009)

  9. No Access

    Article

    Ferromagnetic nanojunctions at a high current-induced spin injection

    A perpendicular current that flows through a ferromagnetic nanojunction (a layered nanosized spinvalve structure containing two ferromagnetic metal layers separated by a spacer) is studied. The spacer is thick...

    Yu. V. Gulyaev, P. E. Zil’berman… in Journal of Communications Technology and E… (2008)

  10. No Access

    Article

    Possibility of increasing the efficiency of spin injection by current in magnetic junctions

    The nonequilibrium spin polarization of electrons is calculated under the conditions of spin injection by current passing from one ferromagnetic film to another in a magnetic junction. It is shown that the non...

    Yu. V. Gulyaev, P. E. Zilberman, A. I. Krikunov, É. M. Épshtein in Technical Physics (2007)

  11. No Access

    Article

    Current-induced inverse population of spin subbands in magnetic junctions

    The spin flux matching conditions that should be satisfied at the boundaries between contacting layers of a magnetic junction to ensure the inverse population of spin subbands at experimentally achievable curr...

    Yu. V. Gulyaev, P. E. Zil’berman, A. I. Krikunov, A. I. Panas… in JETP Letters (2007)

  12. No Access

    Article

    Measurement of magnetic parameters of nanometer-thick conducting magnetic films using anisotropic magnetoresistive effect

    The angular dependences of anisotropic magnetoresistance (AMR) are measured in conducting ferromagnetic films of nanometer thickness and layered structures containing such films and having the shape of narrow ...

    A. V. Medved, R. G. Kryshtal, A. I. Krikunov in Technical Physics (2006)

  13. No Access

    Article

    Use of the anisotropic magnetoresistance effect for direct measurement of the coercivity and exchange bias fields of magnetization reversal in conducting magnetic films of nanometer thickness

    The anisotropic magnetoresistance effect has been used for direct measurement of the coercivity and exchange bias fields of magnetization reversal in conducting ferromagnetic films of nanometer thickness and i...

    A. V. Medved, R. G. Kryshtal, A. I. Krikunov, S. I. Kasatkin in Technical Physics Letters (2005)

  14. No Access

    Article

    1D GaAs Detector Arrays for Digital X-ray Imaging

    1D imaging arrays of GaAs x-ray detectors are designed, fabricated, and tested. Each array consists of 64 detectors arranged with a pitch of 0.4 mm. In x-ray testing, an almost linear relationship is found bet...

    V. F. Dvoryankin, Yu. M. Dikaev, A. I. Krikunov… in Russian Microelectronics (2004)

  15. No Access

    Article

    1D GaAs Detector Arrays for Digital X-ray Imaging with a 108-μm Spatial Resolution

    A 1D x-ray detector array of pitch 108 μm is designed, fabricated, and tested. The array is based on the p+–n–n′–n+ structure made in epitaxial GaAs technology. Guard rings are incorporated to reduce detector cro...

    V. F. Dvoryankin, Yu. M. Dikaev, A. I. Krikunov, T. M. Panova… in Russian Microelectronics (2004)

  16. No Access

    Article

    Photovoltaic X-ray detectors based on epitaxial GaAs structures

    A new type of the photovoltaic X-ray detector based on epitaxial p +-n-n′-n + GaAs structures is proposed, which provides for a high efficiency of charge carrier collection in a nonbiased operation regime at room...

    R. A. Achmadullin, V. F. Dvoryankin, G. G. Dvoryankina… in Technical Physics Letters (2002)

  17. No Access

    Article

    Current hysteresis in magnetic tunnel junctions

    A current hysteresis is detected in magnetic tunnel junctions of the ferromagnetic metal-nonmagnetic insulator-ferromagnetic metal type. The hysteresis is manifested in the formation of loops on the curves des...

    A. M. Baranov, Yu. V. Gulyaev, P. E. Zilberman… in Physics of the Solid State (2001)

  18. No Access

    Article

    Thin-film magnetically soft Fe-Zr-N alloys with high saturation induction

    Thin films of magnetically soft nanocrystalline alloys of the Fe-Zr-N system with a high (1.6–1.8 T) saturation induction and a very low (record) coercive force (4–6 A/m) were obtained by magnetron sputtering ...

    O. A. Bannykh, E. N. Sheftel’, V. E. Zubov, D. E. Kaputkin… in Technical Physics Letters (2001)