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Article
Mechanical Stresses and Magnetic Properties of NiFe and CoNiFe Films Obtained by Electrochemical Deposition
Magnetic films of NiFe permalloy and CoNiFe ternary alloy are used in products of nanoelectronics and microelectronics and in densely packed magnetic memory. NiFe and CoNiFe coatings decrease corrosion and wea...
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Article
Congruent Electrochemical Deposition of Co–Ni–Fe Films
Heating of chloride electrolyte up to 70°С ensures the normal codeposition of components of the Co–Ni–Fe alloy as a result of the discharge of iron, cobalt, and nickel ions at the high cathodic current density...
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Article
Magnetic Permeability of Co–Ni–Fe Alloy Films Obtained by Electrochemical Deposition
The magnetic properties of films of the Co–Ni–Fe alloy, fabricated by the technology of local electrochemical deposition from a chloride electrolyte, are studied. The dependences of magnetization on the deposi...
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Article
Ion Discharge in Electrochemical Deposition of CoNiFe Films
Heating of chloride electrolyte to a temperature of 70°C provides normal codeposition of the components of СоNiFe alloy as a result of discharge of iron, cobalt, and nickel ions at a high cathodic current dens...
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Article
Spectrophotometric Monitoring of Chloride Electrolyte for the Electrochemical Deposition of Permalloy
The use of chloride electrolytes for the electrochemical deposition of the Ni81Fe19 permalloy is promising because sulfate electrolytes are unstable in the presence of sulfur. The magnetic properties of the Ni81F...
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Article
Electrochemical Deposition of NiFe Alloy at a Temperature of 70°C
The heating of chloride electrolyte to a temperature of 70°C excludes anomalous codeposition of NiFe alloy components as a result of a change of the nature of discharging iron ions from the single-charged (Fe2+Cl
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Article
Electrochemical Deposition of Permalloy Films for Magneto-Semiconductor Microsystems
The results of investigating local electrochemical deposition from a chloride electrolyte are presented. Ni81Fe19 permalloy films with magnetic properties similar to those of 3D samples with a uniform thickness a...
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Article
Planar Magnetotransistor with Compensation of Collector Current
The design of a magnetotransistor with two contacts to the base for the purpose of increasing the sensitivity of a planar magnetotransistor is investigated. The possibility of creating a magnetotransistor with...
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Article
Magnetization of permalloy films
In this paper, we investigate the magnetic properties of the permalloy films prepared by local electrochemical deposition from a chloride electrolyte. The dependence of magnetization on the deposition mode, as...
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Article
Microsystem with magnetic-transistor transducers for vibration monitoring
The model of microsystem of mechatronic device with magnetic transistor converters is investigated experimentally. It was established that microsystem of mechatronic devices with silicon console, micromagnet a...
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Article
Investigation of magnetotransistors with new topology
Sensitivity of a lateral magnetotransistor with orthogonal charge carrier flows is investigated by means of device-technological simulation. The comparison of the simulation results for parallel carrier flows ...
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Article
Effect of the design and manufacture parameters on the characteristics of a triple-collector bipolar magnetotransistor
We experimentally studied the sensitivity and initial voltage offset between the collectors of the lateral dual-collector n-p-n magnetotransistor with the base formed in a well that serves as a third collector at...
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Article
Influence of do** the base surface on parameters of a bipolar dual-collector lateral magnetotransistor
The effect of sensitivity inversion of magnetotransistors is studied using an instrument-technological simulation. The comparison of simulation results and experimental data enabled us to determine relations b...
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Article
The Effect of the Circuit Connection on the Characteristic of a Three-Collector Magnetotransistor
The sensitivity and initial voltage offset between the collectors of a two-collector lateral bipolar npn-type magnetotransistor with a base formed in the well, which serves as the third collector, are investig...
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Article
Magnetoconcentration effect on a base pn junction of a bipolar magnetotransistor
An experimentally discovered negative sensitivity effect related to the occurrence of the bulk magnetoconcentration effect on the well-substrate pn junction of a dual-collector lateral bipolar npn magnetotransist...
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Article
Offset voltage of an integrated magnetotransistor sensor
An experimental investigation is reported on the offset voltage of an integrated magnetic-field sensor based on a dual-collector lateral npn bipolar magnetotransistor and polysilicon resistors, with the magnet...
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Article
The magnetoconcentration effect in the base–substrate pn-junction of a bipolar magnetotransistor
A negative sensitivity effect in dual-collector lateral npn-type bipolar magnetotransistors, formed in the well, found experimentally, is investigated using instrument-technological modeling. It is established th...
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Article
Dual-collector bipolar magnetotransistor: Defining and determining its magnetic-field sensitivity
The definition of the magnitude and sign of magnetic-field sensitivity is discussed in relation to the bipolar magnetotransistor. The bulk-recombination mechanism (also known as the volumetric concentration-re...
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Article
An integrated magnetotransistor sensor
The initial voltage offset between the collectors in integrated circuits, including an npn-type dual-collector lateral bipolar magnetotransistor, formed in a well, and polysilicon resistors, is investigated ex...
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Article
Sign of bipolar-magnetotransistor sensitivity as dependent on device structure
An experiment is conducted to compare the performance of two designs of dual-collector lateral bipolar magnetotransistor, which are formed in a uniformly doped substrate or a diffused well. Their respective di...
