Abstract
The effect of the electrostatic interaction of charges in multiple quantum wells of a doped heterostructure is studied by admittance spectroscopy methods and numerical self-consistent calculations. Samples containing three InGaAs/GaAs quantum wells each 7 nm thick, separated by 150-nm barriers, are studied in detail. The InAs content in the wells is 22, 16, and 11.5%. Experimentally and by simulation, it is shown that the effect of the relative carrier depletion in the middle quantum well occurs due to the joining of local spacecharge regions around the quantum wells and is accompanied by raise of the middle well potential. The quantitative characteristics of this effect are analyzed depending on temperature, barrier thickness, and dopant concentration.
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Original Russian Text © V.I. Zubkov, I.N. Yakovlev, V.G. Litvinov, A.V. Ermachihin, O.V. Kucherova, V.N. Cherkasova, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 7, pp. 944–950.
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Zubkov, V.I., Yakovlev, I.N., Litvinov, V.G. et al. Analysis of the electrostatic interaction of charges in multiple InGaAs/GaAs quantum wells by admittance-spectroscopy methods. Semiconductors 48, 917–923 (2014). https://doi.org/10.1134/S1063782614070227
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DOI: https://doi.org/10.1134/S1063782614070227