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  1. No Access

    Article

    Multiple-pixel X-ray linear detector based on single CdZnTe crystals

    The design of an X-ray linear detector based on single crystals Cd0.9Zn0.1Te has been described. The results of usage have been given.

    V. F. Dvoryankin, G. G. Dvoryankina, Yu. M. Dikaev in Russian Microelectronics (2015)

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    Article

    Photovoltaic X-ray detectors on the basis of GaAs epitaxial structures

    The results of investigations of the properties of a new photovoltaic X-ray detector are presented. The detector was manufactured on the basis of a GaAs (p +-n-n′-n +) epitaxial st...

    V. F. Dvoryankin, G. G. Dvoryankina in Instruments and Experimental Techniques (2013)

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    Article

    X-ray detectors based on CdZnTe crystals grown from the vapor phase

    X-ray detectors on the basis of vapor-phase-grown Cd0.92Zn0.08Te crystals are fabricated. The main characteristics of the detectors are investigated. It is shown that vapor-phase-grown CdZnTe crystals can be succ...

    V. F. Dvoryankin, G. G. Dvoryankina, A. A. Kudryashov, A. G. Petrov in Technical Physics (2012)

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    Article

    Performance of Cd0.9Zn0.1Te X-ray detectors versus the purity of initial components

    X-ray detectors made of Cd0.9Zn0.1Te single crystals are studied. Starting components (Cd, Zn, Te) are obtained by multistage volume distillation. Synthesized CdZnTe is finally purified by continuous vacuum subli...

    V. F. Dvoryankin, G. G. Dvoryankina, Yu. M. Ivanov, A. A. Kudryashov in Technical Physics (2011)

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    Article

    Photovoltaic X-ray detectors made of CdTe crystals with a p-n junction

    X-ray detectors made of CdTe crystals with a p-n junction obtained by diffusion of In into p-CdTe are investigated. The basic characteristics of such a detector are studied for the first time. It is found that th...

    V. F. Dvoryankin, G. G. Dvoryankina, Yu. M. Ivanov, A. A. Kudryashov in Technical Physics (2010)

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    Article

    X-ray sensitivity of Cd0.9Zn0.1Te detectors

    The X-ray sensitivity of Cd0.9Zn0.1Te detectors as a function of the effective X-ray energy and bias voltage is studied. It is shown that the sensitivity grows with effective X-ray energy and much more significan...

    V. F. Dvoryankin, G. G. Dvoryankina, A. A. Kudryashov, A. G. Petrov in Technical Physics (2010)

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    Article

    Calculation of the atomic scattering factors of fast electrons at zero angle of incidence of an electron beam and mean inner crystal potentials

    The atomic scattering factors of fast electrons at zero angle of incidence of an electron beam, f el(0), are calculated for neutral atoms with Z = 1−54, using the mean-square radii of elec...

    G. G. Dvoryankina, V. F. Dvoryankin, A. G. Petrov in Crystallography Reports (2008)

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    Article

    Use of epitaxial gallium arsenide in detectors

    The results of investigations of semiconductor detectors on the basis of epitaxial layers of gallium arsenide for detecting x rays and low-energy radiation are examined. It is shown that epitaxial layers rangi...

    V. M. Zaletin, Yu. V. Tuzov, V. F. Dvoryankin, A. A. Sokolovskii in Atomic Energy (2007)

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    Article

    Characteristics of a photovoltaic X-ray detector based on a GaAs epitaxial structure

    The characteristics of a photovoltaic X-ray detector based on the GaAs p +-n-n′-n + epitaxial structure grown using gas-phase epitaxy are studied. Typical current-voltage and capac...

    V. F. Dvoryankin, G. G. Dvoryankina, Yu. M. Dikaev, M. G. Ermakov in Technical Physics (2007)

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    Article

    1D GaAs Detector Arrays for Digital X-ray Imaging

    1D imaging arrays of GaAs x-ray detectors are designed, fabricated, and tested. Each array consists of 64 detectors arranged with a pitch of 0.4 mm. In x-ray testing, an almost linear relationship is found bet...

    V. F. Dvoryankin, Yu. M. Dikaev, A. I. Krikunov in Russian Microelectronics (2004)

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    Article

    1D GaAs Detector Arrays for Digital X-ray Imaging with a 108-μm Spatial Resolution

    A 1D x-ray detector array of pitch 108 μm is designed, fabricated, and tested. The array is based on the p+–n–n′–n+ structure made in epitaxial GaAs technology. Guard rings are incorporated to reduce detector cro...

    V. F. Dvoryankin, Yu. M. Dikaev, A. I. Krikunov, T. M. Panova in Russian Microelectronics (2004)

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    Article

    On the properties of photovoltaic X-ray detectors based on GaAs epitaxial structures

    Operation of a new photovoltaic detector of X-ray bremsstrahlung based on GaAs epitaxial structures at room temperature without bias is studied. The efficiency of the absorbed energy conversion into short-circ...

    V. F. Dvoryankin, Yu. M. Dikaev, A. A. Kudryashov in Technical Physics (2004)

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    Article

    Determining the Instantaneous Effective Energy of x-Ray Tube Bremsstrahlung

    A method is described for determining the instantaneous effective energy of x-ray tube brehmsstrahlung by means of two semiconductor detectors employing epitaxial GaAs structures and a measurement circuit, whi...

    V. F. Dvoryankin, Yu. M. Dikaev, A. A. Kudryashov in Measurement Techniques (2003)

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    Article

    Reduction of the Output Ripple in X-Ray Detectors

    In a multichannel X-ray detector based on epitaxial GaAs structures, a low-pass filter was used to reduce the ripple at the amplifier output. From the transient processes observed during the X-ray scanning, th...

    V. F. Dvoryankin, Yu. M. Dikaev in Instruments and Experimental Techniques (2002)

  15. No Access

    Article

    Photovoltaic X-ray detectors based on epitaxial GaAs structures

    A new type of the photovoltaic X-ray detector based on epitaxial p +-n-n′-n + GaAs structures is proposed, which provides for a high efficiency of charge carrier collection in a nonbiased operation regime at room...

    R. A. Achmadullin, V. F. Dvoryankin, G. G. Dvoryankina in Technical Physics Letters (2002)

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    Article

    Compaction of adsorbed alkali metal submonolayers on the {111} and {0001} surfaces of metal crystals

    The structural mechanism has been suggested of formation of the ordered surface hexagonal structures with an increase of the coverage during adsorption of alkali metal atoms on the {111} surfaces of face-cente...

    V. F. Dvoryankin, G. G. Dvoryankina in Crystallography Reports (2001)

  17. No Access

    Article

    Statistical model of the formation of close-packed hexagonal adsorbed layers

    V. F. Dvoryankin, V. V. Kozhin, V. P. Sadovnikov in Journal of Structural Chemistry (1981)

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    Article

    Adsorption isotherms and order-disorder phase transformations in coherent adsorbed layers

    V. F. Dvoryankin, A. A. Telegin, L. S. Telegina in Journal of Structural Chemistry (1980)

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    Article

    Atomic potential distribution taking termination of the Fourier series into account

    G. G. Dvoryankina, V. F. Dvoryankin in Journal of Structural Chemistry (1970)

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    Article

    Possibility of using the method of least squares for refining disordered structures

    V. F. Dvoryankin, G. G. Dvoryankina in Journal of Structural Chemistry (1968)

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