![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
A nonlocal approach for semianalytical modeling of a heterojunction vertical surrounding-gate tunnel FET
A semianalytical model based on a nonlocal approach is proposed for an undoped tunnel field-effect transistor (TFET) with a vertical surrounding-gate structure. The heterostructure band alignment is computed b...
-
Article
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation
A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipola...
-
Article
Evaluation of optimality in the fuzzy single machine scheduling problem including discounted costs
The single machine scheduling problem has been often regarded as a simplified representation that contains many polynomial solvable cases. However, in real-world applications, the imprecision of data at the le...
-
Chapter and Conference Paper
An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices
Nowadays, the tremendous shrinking of electronic devices has reduced their sizes to very low scales. However, this process has been accompanied unavoidably with many well-recognized reliability challenges basi...