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    Photoluminescence of Silicon Nanostructures Formed by Ion Beam Implantation

    A new method was used to fabricate nanometer-scale structures in Si for photoluminescence (PL) studies. He ions were implanted to form a dense subsurface layer of small cavities (1–8 nm diameters). The implant...

    D. A. Redman, D. M. Follstaedt, T. Guilinger, M. Kelly in MRS Online Proceedings Library (1992)