Abstract
A new method was used to fabricate nanometer-scale structures in Si for photoluminescence (PL) studies. He ions were implanted to form a dense subsurface layer of small cavities (1–8 nm diameters). The implanted specimens were either annealed in H or anodized with HF to evaluate the quantum confinement model for PL from porous Si. Incomplete passivation apparently prevented PL in the H-annealed specimens. Implantation combined with anodization produced a substantial blue shift relative to anodization alone, which is consistent with quantum confinement.
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Acknowledgement
The authors thank M. P. Moran for preparing cross-section TEM specimens and D. M. Bishop for performing the ion implantations and the anneals. Discussions with S. M. Myers, W. R. Wampler and H. J. Stein were quite valuable. This work performed under the auspices of the U. S. Department of Energy under contract DE-AC04-76DP00789.
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Redman, D.A., Follstaedt, D.M., Guilinger, T. et al. Photoluminescence of Silicon Nanostructures Formed by Ion Beam Implantation. MRS Online Proceedings Library 279, 201–206 (1992). https://doi.org/10.1557/PROC-279-201
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DOI: https://doi.org/10.1557/PROC-279-201