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Article
Density of States in Tritiated Amorphous Silicon Measured Using CPM
The constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the con...
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Article
Modeling of Beta Conductivity in Tritiated Amorphous Silicon
The change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed t...
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Article
Recombination in Tritiated Amorphous Silicon
Tritiated amorphous silicon was used for the intrinsic layer of a p-i-n hydrogenated amorphous silicon diode. Current versus voltage measurements were carried out on the diode over time under dark and illumina...