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  1. No Access

    Article

    Density of States in Tritiated Amorphous Silicon Measured Using CPM

    The constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the con...

    Simone Pisana, Stefan Costea, Tome Kosteski… in MRS Online Proceedings Library (2005)

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    Article

    Modeling of Beta Conductivity in Tritiated Amorphous Silicon

    The change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed t...

    Stefan Costea, Franco Gaspari, Tome Kosteski… in MRS Online Proceedings Library (2000)

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    Article

    Recombination in Tritiated Amorphous Silicon

    Tritiated amorphous silicon was used for the intrinsic layer of a p-i-n hydrogenated amorphous silicon diode. Current versus voltage measurements were carried out on the diode over time under dark and illumina...

    Tome Kosteski, Franco Gaspari, David Hum, Stefan Costea… in MRS Online Proceedings Library (2000)