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  1. Article

    Open Access

    Phonon-mediated temperature dependence of Er3+ optical transitions in Er2O3

    Characterization of the atomic level processes that determine optical transitions in emerging materials is critical to the development of new platforms for classical and quantum networking. Such understanding ...

    Adam Dodson, Hongrui Wu, Anuruddh Rai, Sohm Apte, Andrew O’Hara in Communications Physics (2024)

  2. No Access

    Article

    Single-atom vibrational spectroscopy with chemical-bonding sensitivity

    Correlation of lattice vibrational properties with local atomic configurations in materials is essential for elucidating functionalities that involve phonon transport in solids. Recent developments in vibratio...

    Mingquan Xu, De-Liang Bao, Aowen Li, Meng Gao, Dongqian Meng, Ang Li in Nature Materials (2023)

  3. Article

    Open Access

    Emergent ferromagnetism and insulator-metal transition in δ-doped ultrathin ruthenates

    Heterostructures of complex transition metal oxides are known to induce extraordinary emergent quantum states that arise from broken symmetry and other discontinuities at interfaces. Here we report the emergen...

    Zeeshan Ali, Mohammad Saghayezhian, Zhen Wang, Andrew O’Hara in npj Quantum Materials (2022)

  4. No Access

    Article

    Intrinsically patterned corrals in monolayer Ag5Se2 and selective molecular co-adsorption

    Functionalized two-dimensional (2D) materials play an important role in both fundamental sciences and practical applications. The construction and precise control of patterns at the atomic-scale are necessary ...

    Jianchen Lu, Shiru Song, Shuai Zhang, Yang Song, Yun Cao, Zhenyu Wang in Nano Research (2022)

  5. Article

    Open Access

    Emergent interface vibrational structure of oxide superlattices

    As the length scales of materials decrease, the heterogeneities associated with interfaces become almost as important as the surrounding materials. This has led to extensive studies of emergent electronic and ...

    Eric R. Hoglund, De-Liang Bao, Andrew O’Hara, Sara Makarem in Nature (2022)

  6. No Access

    Article

    Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

    The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mains...

    Liangmei Wu, Aiwei Wang, **an Shi, Jiahao Yan, Zhang Zhou in Nature Nanotechnology (2021)

  7. Article

    Open Access

    Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6

    Polar van der Waals chalcogenophosphates exhibit unique properties, such as negative electrostriction and multi-well ferrielectricity, and enable combining dielectric and 2D electronic materials. Using low tem...

    Andrius Dziaugys, Kyle Kelley, John A. Brehm, Lei Tao in Nature Communications (2020)

  8. No Access

    Article

    InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

    Two-dimensional (2D) materials as channel materials provide a promising alternative route for future electronics and flexible electronics, but the device performance is affected by the quality of interface bet...

    Liangmei Wu, **an Shi, Zhang Zhou, Jiahao Yan, Aiwei Wang, Ce Bian in Nano Research (2020)

  9. Article

    Open Access

    Detection of defects in atomic-resolution images of materials using cycle analysis

    The automated detection of defects in high-angle annular dark-field Z-contrast (HAADF) scanning-transmission-electron microscopy (STEM) images has been a major challenge. Here, we report an approach for the autom...

    Oleg S. Ovchinnikov, Andrew O’Hara in Advanced Structural and Chemical Imaging (2020)

  10. No Access

    Article

    Tunable quadruple-well ferroelectric van der Waals crystals

    The family of layered thio- and seleno-phosphates has gained attention as potential control dielectrics for the rapidly growing family of two-dimensional and quasi-two-dimensional electronic materials. Here we...

    John A. Brehm, Sabine M. Neumayer, Lei Tao, Andrew O’Hara in Nature Materials (2020)

  11. No Access

    Article

    Synthesis and properties of free-standing monolayer amorphous carbon

    Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks1, ...

    Chee-Tat Toh, Hongji Zhang, Junhao Lin, Alexander S. Mayorov, Yun-Peng Wang in Nature (2020)

  12. Article

    Open Access

    Interface-induced magnetic polar metal phase in complex oxides

    Polar metals are commonly defined as metals with polar structural distortions. Strict symmetry restrictions make them an extremely rare breed as the structural constraints favor insulating over metallic phase....

    Meng Meng, Zhen Wang, Aafreen Fathima, Saurabh Ghosh in Nature Communications (2019)

  13. No Access

    Article

    Spectroscopic signatures of edge states in hexagonal boron nitride

    We use Z-contrast imaging and atomically resolved electron energy-loss spectroscopy on an aberration-corrected scanning transmission electron microscope to investigate the local electronic states of boron atom...

    Chuang Gao, Lei Tao, Yu-Yang Zhang, Shixuan Du, Sokrates T. Pantelides in Nano Research (2019)

  14. Article

    Open Access

    Spatially and spectrally resolved orbital angular momentum interactions in plasmonic vortex generators

    Understanding the near-field electromagnetic interactions that produce optical orbital angular momentum (OAM) is crucial for integrating twisted light into nanotechnology. Here, we examine the cathodoluminesce...

    Jordan A. Hachtel, Sang-Yeon Cho, Roderick B. Davidson II in Light: Science & Applications (2019)

  15. No Access

    Article

    Tuning the morphology of chevron-type graphene nanoribbons by choice of annealing temperature

    Bottom-up synthesis of graphene nanoribbons (GNRs) by surface-assisted polymerization and cyclodehydrogenation of specifically designed precursor monomers has been shown to yield precise edges and do**. Here...

    Yun Cao, **g Qi, Yan-Fang Zhang, Li Huang, Qi Zheng, **ao Lin in Nano Research (2018)

  16. No Access

    Article

    Recovery of edge states of graphene nanoislands on an iridium substrate by silicon intercalation

    Finite-sized graphene sheets, such as graphene nanoislands (GNIs), are promising candidates for practical applications in graphene-based nanoelectronics. GNIs with well-defined zigzag edges are predicted to ha...

    Hui Chen, Yande Que, Lei Tao, Yu-Yang Zhang, **ao Lin, Wende **ao in Nano Research (2018)

  17. No Access

    Article

    Sulfur-doped graphene nanoribbons with a sequence of distinct band gaps

    Unlike graphene sheets, graphene nanoribbons (GNRs) can exhibit semiconducting band gap characteristics that can be tuned by controlling impurity do** and the GNR widths and edge structures. However, achievi...

    Yan-Fang Zhang, Yi Zhang, Geng Li, Jianchen Lu, Yande Que, Hui Chen in Nano Research (2017)

  18. Article

    Open Access

    Fast kinetics of magnesium monochloride cations in interlayer-expanded titanium disulfide for magnesium rechargeable batteries

    Magnesium rechargeable batteries potentially offer high-energy density, safety, and low cost due to the ability to employ divalent, dendrite-free, and earth-abundant magnesium metal anode. Despite recent progr...

    Hyun Deog Yoo, Yanliang Liang, Hui Dong, Junhao Lin, Hua Wang in Nature Communications (2017)

  19. Article

    Open Access

    Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

    Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, co...

    Fucai Liu, Lu You, Kyle L. Seyler, **aobao Li, Peng Yu, Junhao Lin in Nature Communications (2016)

  20. No Access

    Article

    Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As

    Continued effort has been placed on maximizing activation while controlling the diffusion of silicon do** in InGaAs for present and future complementary metal-oxide semiconductor devices. In order to explore...

    Henry Aldridge Jr., Aaron G. Lind, Cory C. Bomberger in Journal of Electronic Materials (2016)

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