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  1. No Access

    Article

    Infrared Photoelastic Study of Thin-Film-Edge-Induced Stresses in Silicon Substrates

    The stress distribution in silicon substrates under a silicon dioxide thin film edge, long oxide thin film stripes and long oxide window structures have been studied using the infrared photoelastic (IRPE) meth...

    H. J. Peng, S. P. Wong, Shounan Zhao in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Thin-Film-Edge-Induced Stresses in Substrates

    We have obtained an analytic solution of linear elasticity for the stress distribution under a thin film edge in isotropic substrates of finite thickness and of infinite extent in the other two directions. The...

    S. P. Wong, H. J. Peng, Shounan Zhao in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Effects of Beam Current Density on Ion Beam Synthesis OF SiC

    Thin SiC layers were synthesized by high dose C implantation into silicon using a metal vapor vacuum arc ion source at various conditions. Characterization of the ion beam synthesized SiC layers was performed ...

    D. H. Chen, S. P. Wong, J. K. N. Lindner in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    Characterization of Thin Layers of Metal Clusters Embedded in Silica Glass Formed by High Dose Ion Implantation

    Thin layers of metal clusters in silica glass were formed by high dose ion implantation of Ag, Ni and Cu using a metal vapor vacuum arc (MEVVA) ion source. Characterization of the implanted layers was performe...

    P. S. Chung, S. P. Wong, W. Y. Cheung, N. Ke, W. K. Lee… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Growth and Characterization of Erbium Silicides Synthesized by Metal Vapor Vacuum Arc Ion Implantation

    Erbium atoms were implanted into p-type Si (111) wafers at an extraction voltage of 60 kV to doses ranging from 5×1016 to 2×1017 cm−2 using a metal vapour vacuum arc (MEVVA) ion source. The implantation was perfo...

    X. W. Zhang, W. Y. Cheung, S. P. Wong in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Structural Inhomogeneity of SrBi2Ta2O9Thin Films Prepared by Layer-by-Layer Technique

    Grazing incidencex-ray diffraction has been employed to perform the depth-profile analysis on SrBi2Ta2O9 (SBT) thin films with different preferential orientations. For the polycrystalline SBT thin film, the chang...

    J. B. Xu, G. D. Hu, S. P. Wong in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Silicon Field Emitter Array by Fast Anodization Method

    A new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). ...

    Y. M. Fung, W. Y. Cheung, I. H. Wilson, J. B. Xu… in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

    Nickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 6×1017 cm−2. Characterizatio...

    X. W. Zhang, S. P. Wong, W. Y. Cheung, F. Zhang in MRS Online Proceedings Library (2011)

  9. No Access

    Article

    Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation

    Planar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum arc ion source. The variations of the field emission properties with the implant dose and annealing condit...

    Dihu Chen, S. P. Wong, W. Y. Cheung, E. Z. Luo, W. Wu… in MRS Online Proceedings Library (2011)

  10. No Access

    Article

    Magnetically Soft Co-C Granular-like Amorphous Thin Films With High Resistivity and High Saturation Flux Density

    Granular-like amorphous CoxC1-x nanocomposite thin films, with x in the range of 60-75% in atomic percentage, have been prepared by pulsed filtered vacuum arc deposition. The structures of the films were characte...

    H. Wang, S. P. Wong, M. F. Chiah, W. Q. Li, C. Y. Poon… in MRS Online Proceedings Library (2011)

  11. No Access

    Article

    Characterization of CoPt-C and FePt-C Nanocomposite Films Prepared by Pulsed Filtered Vacuum Arc Deposition

    CoPt-C and FePt-C nanocomposite thin films were prepared by a pulsed filtered vacuum arc deposition technique. Thermal annealing was performed in vacuum at various temperatures. The dependence of the magnetic ...

    M. F. Chiah, H. Wang, P. Chen, C. Y. Poon, W. Y. Cheung… in MRS Online Proceedings Library (2011)

  12. No Access

    Article

    Non-viral S/MAR vectors replicate episomally in vivo when provided with a selective advantage

    The ideal gene therapy vector should enable persistent expression without the limitations of safety and reproducibility. We previously reported that a prototype plasmid vector, containing a scaffold matrix att...

    S P Wong, O Argyros, C Coutelle, R P Harbottle in Gene Therapy (2011)

  13. No Access

    Article

    Persistent episomal transgene expression in liver following delivery of a scaffold/matrix attachment region containing non-viral vector

    An ideal gene therapy vector should enable persistent transgene expression without limitations of safety and reproducibility. Here we report the development of a non-viral episomal plasmid DNA (pDNA) vector th...

    O Argyros, S P Wong, M Niceta, S N Waddington, S J Howe, C Coutelle… in Gene Therapy (2008)

  14. No Access

    Article

    Ion-Beam-Synthesized Ag-SiO2 Nanocomposite Layers For Electron Field Emission Devices

    Ag-SiO2 nanocomposite layers were synthesised by Ag+ implantation into thermally oxidised SiO2 layers and demonstrated to have excellent field emission (FE) properties. These nanocomposite layers can give an emis...

    W. M. Tsang, V. Stolojan, A. A. D. T. Adikaari… in MRS Online Proceedings Library (2006)

  15. No Access

    Article

    Fabrication of rutile TiO2 thin films by low-temperature, bias-assisted cathodic arc deposition and their dielectric properties

    The use of rutile-type titanium dioxide (TiO2) thin films as advanced gate dielectrics has been hampered by thermodynamic instability during the high deposition or annealing temperature of 800 °C. In this work, w...

    A. P. Huang, Paul K. Chu, L. Wang, W. Y. Cheung, J. B. Xu… in Journal of Materials Research (2006)

  16. No Access

    Article

    Probing Process-Induced Defects in Si Using Infrared Photoelastic Stress Measurement Technique

    The stress depth distribution in the silicon substrate under thin thermal oxide layers has been measured using the photoelastic technique. With the high sensitivity and improved spatial resolution of a newly d...

    X. H. Liu, S. P. Wong, H. J. Peng, N. Ke, Shounan Zhao in MRS Online Proceedings Library (2005)

  17. No Access

    Article

    Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

    We have prepared FeSi2 precipitates of nanometer size in Si by ion implantation using a metal vapor vacuum arc (MEVVA) ion source and studied their photoluminescence properties. Broad photoluminescence (PL) spect...

    C.F. Chow, Y. Gao, S.P. Wong, N. Ke, Q. Li, W.Y. Cheung… in MRS Online Proceedings Library (2004)

  18. No Access

    Article

    Stress Distribution in Ultra Thin SiO2 Film/Si Substrate System Measured by a Low Level Birefringence Detection Technique

    In this work, a low level birefringence detection system was employed to study the stress distribution in Si substrate induced by thermally grown ultra-thin SiO2 film. According to traditional bi-metallic strip t...

    S.P. Wong, H. J. Peng, X. H. Liu, Shounan Zhao in MRS Online Proceedings Library (2004)

  19. No Access

    Article

    Field Enhancement Mechanisms and Electron Field Emission Properties of Ion Beam Synthesized and Modified SiC/Si Heterostructures

    SiC/Si heterostructures were synthesized by high dose carbon implantation into silicon using a metal vapor vacuum arc ion source. Their electron field emission properties were studied and correlated with resul...

    W. M. Tsang, S. P. Wong, J. K. N. Lindner in MRS Online Proceedings Library (2003)

  20. No Access

    Article

    TEM and PL Study of FeSi2 Precipitates Formed in Si by Iron Implantation Using a Metal Vapor Vacuum Arc Ion Source

    In this work, FeSi2 precipitates were formed in Si by iron implantation using a metal vapor vacuum arc ion source. Transmission electron microscopy (TEM) was used to determine the crystal and defect structures of...

    Y. Gao, W.Y. Cheung, S.P. Wong, G. Shao, K.P. Homewood in MRS Online Proceedings Library (2002)

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