-
Article
Open AccessSuper-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator
We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in...
-
Article
Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion Implantation
Implantation of Si+ ions into thermal oxides grown on silicon has been used to synthesise a two phase structure consisting of Si nanocrystals in a SiO2 matrix. Various processing conditions have been used in orde...
-
Article
The Effect of Annealing on Argon Implanted Edge Terminations for 4H-SiC Schottky Diodes
The edge termination of SiC by the implantation of an inert ion species is used widely to increase the breakdown voltage of high power devices. We report results of the edge termination of Schottky barrier dio...
-
Article
Efficient silicon light emitting diodes made by dislocation engineering
Efficient room temperature silicon based light emitting diodes have been fabricated by conventional ULSI processes using a recently developed dislocation engineering approach. Strong silicon band edge luminesc...
-
Article
Optimising dislocation-engineered silicon light-emitting diodes
This article presents a study of the possibilities of optimising the electroluminescence (EL) efficiency of dislocation-engineered silicon light-emitting diodes (DELEDs). The diodes were produced by implantati...
-
Article
Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation
We have prepared FeSi2 precipitates of nanometer size in Si by ion implantation using a metal vapor vacuum arc (MEVVA) ion source and studied their photoluminescence properties. Broad photoluminescence (PL) spect...
-
Chapter
Dislocation-Based Silicon Light Emitting Devices
Silicon is by far the most commonly used and preferred semiconductor for the electronics industry, not least because of the much lower cost that results from, for example, cheaper substrates and the savings in...
-
Article
TEM and PL Study of FeSi2 Precipitates Formed in Si by Iron Implantation Using a Metal Vapor Vacuum Arc Ion Source
In this work, FeSi2 precipitates were formed in Si by iron implantation using a metal vapor vacuum arc ion source. Transmission electron microscopy (TEM) was used to determine the crystal and defect structures of...
-
Article
addendum: An efficient room-temperature silicon-based light-emitting diode
-
Article
An efficient room-temperature silicon-based light-emitting diode
There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology1. Bulk silicon has an indirect energy bandgap and is therefore...
-
Article
Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ions
A p-type device grade silicon wafer was implanted by 1 MeV Ru+ ions to a dose of 5.67 × 1016 cm−2. The microstructures of the as-implanted and annealed samples were studied mainly by analytical transmission elect...
-
Article
Fast prototypign of microfluidic devices for separation science
In recent years the field for miniaturised micro-fluidic devices such as miniaturised GC, HPLC, CE and CEC as well as micro-reactors and micro-mixers has grown rapidly. Therefore, technologies to build new dev...
-
Article
Evidence for Non-Equilibrium Vacancy Concentrations Controlling Interdiffusion in III-V Materials
Interdiffusion and self-diffusion in III-V semiconductors has usually been assumed to operate through the diffusion of point defects, the concentrations of which are at thermal equilibrium values. We have stud...
-
Article
Fine Structure of β-FeSi2 Formed out of α- FeSi2 Decomposition: Metastable Phase Transformations
-
Article
A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
Although silicon has long been the material of choice for most microelectronic applications, it is a poor emitter of light (a consequence of having an ‘indirect’ bandgap), so hampering the development of integ...
-
Article
Effects of annealing and cobalt implantation on the optical properties of βFeSi2.
In this paper optical absorption and photoluminescence (PL) techniques are used to study the optical properties of βFeSi2 layers fabricated by Ion Beam Synthesis (IBS). The way in which the band-gap varies when a...
-
Article
Effects of annealing and cobalt implantation on the optical properties of βFeSi2.
In this paper optical absorption and photoluminescence (PL) techniques are used to study the optical properties of βFeSi2 layers fabricated by Ion Beam Synthesis (IBS). The way in which the band-gap varies when a...
-
Article
Determination of the Optical & Materials Properties of βFeSi2 Layers Fabricated Using Ion Beam Synthesis
IBS of buried α and β iron suicide layers was achieved by the implantation of 2 MeV 56Fe+ ions into (100) single crystal silicon substrates over a dose range of 3 × 1017 to 1 × 1018 cm−2followed by a high tempera...
-
Article
Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of do** density
We studied the thermal stability and interdiffusion of InGaAs/GaAs and GaAsSb/GaAs single quantum wells as a function of temperature for both Be and Si do** at various do** concentrations. The interdiffusi...
-
Article
Carrier Lifetime Distributions and Recombination Kinetics in Silicon on Insulator (Simox) Substrate
During the preparation of the substrates, involving ion implantation (> 1014 O* cm−2) and extended high temperature annealing (∼ 1350°C), many defects are unintentionally introduced, which can act as trap** and...
