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  1. No Access

    Article

    Current Status of SiC Power Switching Devices: Diodes & GTOs

    The progress that has been made in SiC diodes and GTOs is reviewed. A 100 A/1000 V SiC pi- n diode package, the highest current rating reported for any SiC device, a 69 A conduction/ 11 A turn-off of a SiC GTO...

    S. Seshadri, A. K. Agarwall, W. B. Hall, S. S. Mani… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Micromechanical testing of MEMS materials

    This paper discusses tensile testing techniques and results derived as part of a broader microstructure-properties investigation of structural materials used in surface micromachined (SMM), and LIGA MEMS techn...

    T. E. Buchheit, S. J. Glass, J. R. Sullivan, S. S. Mani… in Journal of Materials Science (2003)

  3. No Access

    Article

    Chemical Vapor Deposition Coating for Micromachines

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In t...

    S. S. Mani, J. G. Fleming, J. J. Sniegowski… in MRS Online Proceedings Library (2000)

  4. No Access

    Article

    Selective W for Coating and Releasing MEMS Devices

    Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structu...

    S. S. Mani, J. G. Fleming, J. J. Sniegowski… in MRS Online Proceedings Library (1999)

  5. No Access

    Article

    Investigation of microstructural coarsening in Sn-Pb alloys

    The central theme of this work is to investigate the kinetics of microstructural evolution at high volume fractions of the dispersed phase in a solid-liquid mixture. Until recently, the kinetics of coarsening ...

    Sridhar K. Kailasam, ME. Glicksman… in Metallurgical and Materials Transactions A (1999)

  6. No Access

    Article

    4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

    Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an over...

    J. B. Casady, A. K. Agarwal, L. B. Rowland, S. Seshadri… in MRS Online Proceedings Library (1997)

  7. No Access

    Article

    In situ Observations Of Interfacial Instability During Growth of Lead Bromide Crystals

    Effects of convective mixing on the concentration homogeneity of the crystal has been demonstrated. Insitu observations of the solid liquid interface shape during crystal growth are presented which can be used...

    S. S. Mani, N. B. Singh, S. R. Coriell, M. E. Glicksman… in MRS Online Proceedings Library (1995)

  8. No Access

    Article

    Coarsening of three-dimensional droplets by two-dimensional diffusion: Part I. Experiment

    An experimental study of diffusional coarsening, or Ostwald ripening, in a liquid-liquid two-phase system is described. An experiment performed at its isopycnic point, 42°C, allowed observations for the long t...

    J. R. Rogers, J. P. Downey, W. K. Witherow… in Journal of Electronic Materials (1994)

  9. No Access

    Article

    Coarsening of three-dimensional droplets by two-dimensional diffusion: Part II. Theory

    Theoretical modeling of coarsening among a finite cluster of precipitates is implemented, using the multipole expansion method. This method requires the diffusion field to behave quasi-statically. Two approxim...

    V. E. Fradkov, S. S. Mani, M. E. Glicksman, J. R. Rogers… in Journal of Electronic Materials (1994)

  10. No Access

    Article

    Sintering time and atmosphere influences on the microstructure and mechanical properties of tungsten heavy alloys

    The mechanical properties of tungsten heavy alloys are sensitive to the processing cycle and are adversely affected by residual porosity. Sintering times greater than 2 hours usually result in pore growth with...

    R. M. German, A. Bose, S. S. Mani in Metallurgical Transactions A (1992)