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Current Status of SiC Power Switching Devices: Diodes & GTOs

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Abstract

The progress that has been made in SiC diodes and GTOs is reviewed. A 100 A/1000 V SiC pi- n diode package, the highest current rating reported for any SiC device, a 69 A conduction/ 11 A turn-off of a SiC GTO and MTOTM, as well as the first all-SiC, 3 phase Pulse Width Modulated (PWM) inverter are reported, herein, for the first time. The inverter achieves voltage controlled turn off with a high temperature capable, hybrid SiC JFET. Material and process technology issues that will need to be addressed before device commercialization can be realized are discussed.

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Authors and Affiliations

  1. ESSS, STC Northrop Grumman Corporation, 1350 Beulah Road, Pittsburgh, PA, 15235-5098, USA

    S. Seshadri, M. F. MacMillan & P. A. Sanger

  2. Cree Research, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA

    A. K. Agarwall

  3. Northrop Grumman Corporation, Baltimore, MD, USA

    W. B. Hall

  4. Sandia National Laboratory, Albuquerque, NM, USA

    S. S. Mani

  5. Silicon Power Corporation, Malvern, PA, USA

    R. Rodrigues, T. Hanson & S. Khatri

Authors
  1. S. Seshadri
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  2. A. K. Agarwall
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  3. W. B. Hall
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  4. S. S. Mani
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  5. M. F. MacMillan
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  6. R. Rodrigues
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  7. T. Hanson
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  8. S. Khatri
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  9. P. A. Sanger
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Correspondence to S. Seshadri.

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Seshadri, S., Agarwall, A.K., Hall, W.B. et al. Current Status of SiC Power Switching Devices: Diodes & GTOs. MRS Online Proceedings Library 572, 23 (1999). https://doi.org/10.1557/PROC-572-23

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  • DOI: https://doi.org/10.1557/PROC-572-23

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