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  1. No Access

    Chapter and Conference Paper

    Polariscopy Measurement of Residual Stress in Thin Silicon Wafers

    Near-infrared (NIR) Polariscopy has been used to find residual stresses in thin silicon wafers using phase shifting techniques. This paper describes the usage of the ten-step phase shifting method to measure t...

    K. Skenes, R. G. R. Prasath, S. Danyluk in Residual Stress, Thermomechanics & Infrare… (2014)

  2. No Access

    Article

    Comparison of Phase Shifting Techniques for Measuring In-Plane Residual Stress in Thin, Flat Silicon Wafers

    This paper reports on a comparison of the six- and ten-step phase shifting methods in digital transmission photoelasticity and the application of these methods to obtain the residual stresses in thin (200 μm), fl...

    R. G. R. Prasath, K. Skenes, S. Danyluk in Journal of Electronic Materials (2013)

  3. No Access

    Article

    Effects of Nano-scale Colloidal Abrasive Particle Size on SiO2 by Chemical Mechanical Polishing

    This paper reports on the effect of colloidal abrasive particle size in the polishing of thermally grown silicon dioxide on 100mm diameter, P-type, (100), single crystal silicon wafers. The abrasive particle s...

    Chunhong Zhou, Lei Shan, S. H. Ng, Robert Hight… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    An Alternative Non-contact Planarization Technique by Utilizing the Electrokinetic Phenomenon

    In this paper, the authors introduce and present some findings on an alternative non-contact material removal technique. Material removal is made possible by utilizing the electrokinetic and hydrodynamic effec...

    C. S. Leo, S. H. Ng, D. L. Butler, S. Danyluk in MRS Online Proceedings Library (2010)

  5. No Access

    Article

    Interfacial Fluid Pressure and Its Effects on SiO2 Chemical Mechanical Polishing

    In this paper, the experimental results of interfacial fluid pressure and friction measurements during polishing are presented, as well as their dependence on some major process variables. Under simulated cond...

    C. Zhou, L. Shan, J. R. Hight, S. H. Ng, A. J. Paszkowski… in MRS Online Proceedings Library (2000)

  6. No Access

    Article

    The influence of backgrinding on the fracture strength of 100 mm diameter (1 1 1) p-type silicon wafers

    The influence of grinding geometry and damage depth on the fracture strength of 100 mm diameter (1 1 1) p-type silicon wafers has been studied. The fracture strengths were measured in a biaxial flexure test af...

    K McGUIRE, S DANYLUK, T. L BAKER, J. W RUPNOW, D McLAUGHLIN in Journal of Materials Science (1997)

  7. No Access

    Article

    Effect of temperature on the coefficient of friction of Bi2Sr2CaCu2O x ,/Bi2Sr2CaCu2O x and Bi2Sr2CaCu2O x /Ag

    Y. Fang, S. Danyluk, M. T. Lanagan, K. C. Goretta in Journal of Materials Science Letters (1994)

  8. No Access

    Article

    Coefficients of friction of YBCO-YBCO and YBCO-Ag ball-on-flat couples

    The coefficient of friction of polycrystalline YBa2Cu3O7 − x(YBCO) on YBCO and YBCO on Ag was measured versus temperature and humidity in a ball-on-flat linear reciprocating experiment. The coefficient of frictio...

    Yue Fang, S. Danyluk in Journal of Materials Science (1993)

  9. No Access

    Article

    Knoop microhardness anisotropy of YBa2Cu3O7-δ single crystals

    Y. Fang, S. Danyluk, Z. Li, D. Lam in Journal of Materials Science Letters (1993)

  10. No Access

    Article

    Friction and wear of single-crystal silicon at elevated temperatures

    Single-crystal silicon wafers ((1 1 1) and (1 0 0)p-type) were abraded at room temperature 300 °C, and 600 °C by a polycrystalline partially stabilized zirconia ball in a ball-on reciprocating flat geometry. T...

    D. -S. Park, S. Danyluk, M. J. McNallan in Journal of Materials Science (1991)

  11. No Access

    Article

    Residual stress measurement in filament-evaporated aluminium films on single crystal silicon wafers

    Shadow Moire interferometry was used to determine the residual stresses in thin, filament-evaporated aluminium films deposited on (100) p-type, 10.16 cm diameter, 0.05 cm thick, circular single crystal silicon...

    Hai -Woong Park, S. Danyluk in Journal of Materials Science (1991)

  12. No Access

    Article

    Crack formation in metallized single crystal silicon substrates

    Ball bonding of metallized silicon substrates has been simulated by microindentation, with a hemispherical diamond indentor, of (100) silicon wafers that contained aluminum film layers. The indentation loads v...

    T. O’brien, Y. Li, S. Danyluk in Journal of Electronic Materials (1990)

  13. No Access

    Chapter

    Microstructure and Electrical Properties of Bulk High-Tc Superconductors

    Bulk forms of the superconductors Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O generally have a low critical current density (Jc). At 77 K in zero magnetic field, values greater than about 103 A cm−2 have seldom been obtained. Th...

    U. Balachandran, M. J. McGuire, K. C. Goretta… in Superconductivity and Applications (1989)

  14. No Access

    Article

    A Study of Subsurface Damage Generation by Single Scratches of Silicon

    This paper describes the use of electrical resistivity to quantify the damage produced asa result of the scratching of single crystal silicon.

    J. H. Ahn, S. Danyluk in MRS Online Proceedings Library (1988)

  15. No Access

    Article

    A study of indentation annealing of (111)p-type single crystal silicon

    The indentation rosette size in (111)p-type Czochralski grown silicon was measured as a function of annealing temperature (450 to 1100° C), time (600 to 9300 sec) and indentation load (0.147 to 2.94 N). The inden...

    S. W. Lee, S. Danyluk in Journal of Materials Science (1988)

  16. No Access

    Article

    The influence of environmental fluids and temperature on the cut-surface morphology of single-crystal silicon

    Single-crystal (Cz) silicon wafers [(100) p-type] were cut in air, d6onked (DI) water and ethanol, at room temperature, 150 and 200°C by a diamond impregnated dicing wheel using a specially designed apparatus....

    Jae-Mook Kim, S. Danyluk in Journal of Materials Science (1987)

  17. No Access

    Article

    Surface damage of single-crystal silicon abraded in ethanol and deionized water

    Semiconductor grade, single-crystal silicon wafers of (1 0 0) p-type were abraded by a single-point, slow speed (2.3 cm sec−1) 90° pyramid diamond in ethanol and deionized water. The scratching was carried out in...

    D. S. Lim, S. Danyluk in Journal of Materials Science (1985)

  18. No Access

    Article

    Intergranular fracture, corrosion susceptibility, and impurity segregation in sensitized type 304 stainless steel

    1. Charpy impact values are a function of dopant and sensitization conditions. The impact energies are reduced ...

    S. Danyluk, I. Wolke, J. H. Hong, E. A. Loria in Journal of Materials for Energy Systems (1985)

  19. No Access

    Article

    The Metallurgy Program at the University of Illinois at Chicago

    Kamleshwar Upadahya, M. McNallan, S. Danyluk, E. Indacochea in JOM (1985)