A study of indentation annealing of (111)p-type single crystal silicon

Abstract

The indentation rosette size in (111)p-type Czochralski grown silicon was measured as a function of annealing temperature (450 to 1100° C), time (600 to 9300 sec) and indentation load (0.147 to 2.94 N). The indentations were made with the silicon surface immersed in an electrolytic solution containing Nal ions with concentrations in the range of 10⁻⁵ to 10⁻¹ MI⁻¹. The rosette size,2L, was found to depend on the experimental variables as

$$\left\langle {2L} \right\rangle = Ct^{1/2} P^{1.15} exp\left( {\frac{U}{{kT}}} \right)$$

whereC is a constant andt, T, P, andU are the annealing time, temperature, indentation load and energy, respectively, andk is Boltzmann's constant. The energy U has at least three different values depending on the annealing temperature interval and varies to a lesser extent on the indentation load.