![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Electron Transport Properties of InN
High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theore...
-
Article
Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN
We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and4He+ were used t...
-
Article
Oxidation of Silicon Nanocrystals
Silicon nanocrystals have made a recent appearance in the literature because of their potential importance in microelectronic[1] and optoelectronic [2] devices. For example, replacing the traditional Si floati...
-
Article
Integration Aspects and Electrical Properties of SrBi2Ta2O9 for Non-Volatile Memory Applications
Highlights and solutions to some of the challenges involved in integrating SrBi2Ta2O9 (SBT) capacitors with Pt electrodes on silicon wafers for non-volatile memory applications are discussed. These include the di...
-
Article
Impact of Backend Processing on Integrated Ferroelectric Capacitor Characteristics
Integration of a ferroelectric capacitor module in a standard CMOS process subjects the ferroelectric to various ambients during backend processing, some of which can render the ferroelectric essentially non-o...
-
Article
Analyses of Pt/Ti Electrodes for Plzt Capacitors
A suitable choice of an electrode material is important for an acceptable electrical contact to a high-permittivity dielectric, such as PLZT. A material which does not form a low-permittivity oxide is necessar...