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  1. Article

    Dark Currents in a Fully-Depleted LWIR HgCdTe P-on-n Heterojunction: Analytical and Numerical Simulations

    In this paper, we use the theory of Evans and Landsberg, which is a generalization of the Shockley–Read–Hall recombination statistics in the space charge region (SCR), to include effects of Auger and radiative...

    J. Schuster, R. E. DeWames, P. S. Wijewarnasuriya in Journal of Electronic Materials (2017)

  2. No Access

    Article

    Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

    Imaging in the extended short-wavelength infrared (eSWIR) spectral band (1.7–3.0 μm) for astronomy applications is an area of significant interest. However, these applications require infrared detectors with extr...

    J. Schuster, R. E. DeWames, E. A. DeCuir Jr. in Journal of Electronic Materials (2016)

  3. No Access

    Article

    Mid-wavelength infrared p-on-n Hg1−xCdxTe heterostructure detectors: 30–120 kelvin state-of-the-Art performance

    We report on Hg1−xCdxTe mid-wavelength infrared (MWIR) detectors grown by molecular-beam epitaxy (MBE) on CdZnTe substrates. Current-voltage (I-V) characteristics of HgCdTe-MWIR devices and temperature dependence...

    Majid Zandian, J. D. Garnett, R. E. Dewames, M. Carmody in Journal of Electronic Materials (2003)

  4. No Access

    Article

    1/f noise in large-area Hg1−xCdxTe photodiodes

    The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivi...

    A. I. D’Souza, M. G. Stapelbroek, P. N. Dolan in Journal of Electronic Materials (2003)

  5. No Access

    Article

    1/f noise in very-long-wavelength infrared Hg1−xCdx Te detectors

    This paper investigates 1/f noise performance of very-long-wavelength infrared (VLWIR) Hg1−xCdxTe (cutoff wavelengths λc=15 µm and λc=16 µm) photodiodes at 78 K, where detector current is varied by changing detec...

    A. I. D’Souza, M. G. Stapelbroek, P. S. Wijewarnasuriya in Journal of Electronic Materials (2002)

  6. No Access

    Article

    Advances in large-area Hg1−xCdxTe photovoltaic detectors for remote-sensing applications

    State-of-the-art large-area photovoltaic (PV) detectors fabricated in HgCdTe grown by molecular beam epitaxy (MBE) have been demonstrated for the Crosstrack Infrared Sounder (CrIS) instrument. Large-area devic...

    P. S. Wijewarnasuriya, M. Zandian, J. Phillips in Journal of Electronic Materials (2002)

  7. No Access

    Article

    Current mechanisms in VLWIR Hg1−xCdxTe photodiodes

    VLWIR (c∼15 m to 17 m at 78 K) detectors have been characterized as a function of temperature to determine the dominant current mechanisms impacting detector performance. Id−Vd curves indicate that VLWIR detector...

    A. I. D'Souza, R. E. Dewames, P. S. Wijewarnasuriya in Journal of Electronic Materials (2001)

  8. No Access

    Article

    Large VLWIR Hg1−xCdxTe photovoltaic detectors

    Very long wavelength infrared (VLWIR; 15 to 17 µm) detectors are required for remote sensing sounding applications. Infrared sounders provide temperature, pressure and moisture profiles of the atmosphere used ...

    A. I. D’Souza, L. C. Dawson, C. Staller in Journal of Electronic Materials (2000)

  9. No Access

    Article

    Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors

    Excess low frequency noise is investigated for the first time in infrared MBE grown LWIR Hg1−xCdxTe double layer planar heterostructure (DLPH) detectors grown on lattice matched substrates. LWIR detectors having ...

    A. I. D’Souza, P. S. Wijewarnasuriya, R. E. Dewames in Journal of Electronic Materials (1999)

  10. No Access

    Article

    Dark current generating mechanisms in short wavelength infrared photovoltaic detectors

    The current-voltage characteristics and quantum efficiencies of double layer planar heterostructure photodiodes were investigated. Results are reported on devices with cutoff wavelengths of 1.8, 2.4, and 3.3 µ...

    R. E. Dewames, D. D. Edwall, M. Zandian, L. O. Bubulac in Journal of Electronic Materials (1998)

  11. No Access

    Article

    Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

    Results are presented for minority carrier lifetime in n-type molecular beam epitaxy Hg1−xCdxTe with x ranging from 0.2 to 0.6. It was found that the lifetime was unintentionally degraded by post-growth annealing...

    D. D. Edwall, R. E. DeWames, W. V. McLevige, J. G. Pasko in Journal of Electronic Materials (1998)

  12. No Access

    Article

    Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxy

    Characterization of defects in Hg1−xCdxTe compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this mater...

    M. Zandian, J. M. Arias, J. Bajaj, J. G. Pasko in Journal of Electronic Materials (1995)

  13. No Access

    Chapter and Conference Paper

    Millimeter-Wave Properties of Epitaxial YBa2Cu3O7−x Films Grown by Several Methods

    The complex conductivities of epitaxial YBa2Cu3O7−x films grown by pulsed laser deposition, off-axis magnetron sputtering and ion seam sputtering have been determined at 59 GHz from transmission measurements. The...

    P. H. Kobrin, J. T. Cheung, W. W. Ho, N. Glass in Advances in Superconductivity III (1991)

  14. No Access

    Chapter and Conference Paper

    Growth and Characterization of a Semiconductor-Superconductor Heterostructure: the Hg1−xCdxTe/YBa2Cu3O7−x System

    A semiconductor-superconductor heterostructure has been successfully demonstrated in the Hg1−xCdxTe/YBa2Cu3O7−x (YBCO) system. YBCO films were deposited on LaAIO3 substrates by Pulsed Laser Deposition and Hg1−xCd

    Jeffrey T. Cheung, Isoris Gergis, P. Kobrin, J. Arias in Advances in Superconductivity III (1991)

  15. No Access

    Article

    Magnetic forces in thallium- and bismuth-based superconductors

    Hysteretic force-separation relations for Tl, Bi and Y based superconductors and a magnet are compared. The magnitudes of the forces, the hysteresis, and the magnetic stiffness were all largest in the three-la...

    D. B. Marshall, R. E. DeWames, P. E. D. Morgan, J. J. Ratto in Applied Physics A (1990)

  16. No Access

    Article

    Remanent fields and critical currents in Tl2 Ba2Ca2Cu3Ox ceramic

    The temperature and magnetic-field dependences of the remanent magnetization have been determined from far-field measurements for thallium ceramic samples. The current flow that gives rise to the observed magn...

    R. E. DeWames, P. E. D. Morgan, J. J. Ratto, J. R. Porter, W. F. Hall in Applied Physics A (1989)

  17. No Access

    Article

    Flux penetration in high-Tc superconductors: Implications for magnetic suspension and shielding

    Two new effects associated with flux penetration and pinning in superconducting YBa2Cu3Ox are demonstrated. One of these is focussing of magnetic field lines by the superconductor and the other is magnetic suspen...

    D. B. Marshall, R. E. DeWames, P. E. D. Morgan, J. J. Ratto in Applied Physics A (1989)