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  1. No Access

    Article

    Pointing of HAGAR telescope mirrors

    An array of seven atmospheric Cherenkov telescopes was commissioned at a high altitude site in Hanle in the Ladakh region of the Himalayas. The array called HAGAR has been designed to observe celestial γ-rays of ...

    K. S. Gothe, T. P. Prabhu, P. R. Vishwanath, B. S. Acharya… in Experimental Astronomy (2013)

  2. No Access

    Article

    Electrooptical Characterization of MWIR InAsSb Detectors

    InAs1−x Sb x material with an alloy composition of the absorber layer adjusted to achieve 200-K cutoff wavelengths in the 5-μm range has been grown. Compound-bar...

    A.I. D’Souza, E. Robinson, A.C. Ionescu, D. Okerlund… in Journal of Electronic Materials (2012)

  3. No Access

    Article

    Spectral Response Model of Backside-Illuminated HgCdTe Detectors

    Backside-illuminated HgCdTe detectors fabricated on thick CdZnTe substrates have an optical path such that the incident radiation traverses the antireflection (AR) coating layers, the thick CdZnTe substrate, a...

    A. I. D’Souza, E. Robinson, P. S. Wijewarnasuriya… in Journal of Electronic Materials (2011)

  4. No Access

    Article

    Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response

    Increasing very long-wave infrared (VLWIR, λ c ≈ 15 μm) pixel operability was approached by subdividing each pixel into four interdigitated subpixels. High response is maintained across th...

    A. I. D’Souza, M. G. Stapelbroek, P. S. Wijewarnasuriya in Journal of Electronic Materials (2010)

  5. No Access

    Article

    Spectral Response Model for Front-Side-Illuminated Detectors

    Spectral response of detectors can be modeled using a stack matrix approach. The different material layers that make up the detector form the optical stack. Light intensity is proportional to the square of the...

    E. Robinson, A. I. D’Souza, M. G. Stapelbroek… in Journal of Electronic Materials (2009)

  6. No Access

    Article

    Noise Attributes of LWIR HDVIP HgCdTe Detectors

    Time series and Fourier-transform data on high-density vertically integrated photodiodes (HDVIP) at 0 and 50 mV reverse bias in the dark have been studied. The detectors have a cutoff wavelength λ ...

    A.I. D’Souza, M.G. Stapelbroek, E.W. Robinson… in Journal of Electronic Materials (2008)

  7. No Access

    Article

    Correlation between visual defects and increased dark current in large-area Hg1−xCdxTe photodiodes

    The Cross-Track Infrared Sounder (CrIS) program [an instrument on the National Polar-Orbiting Operational Environmental Satellite System (NPOESS)] requires photodiodes with spectral cutoffs denoted by short-wa...

    A. I. D’Souza, M. G. Stapelbroek, R. Willis… in Journal of Electronic Materials (2005)

  8. No Access

    Article

    1/f noise in large-area Hg1−xCdxTe photodiodes

    The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivi...

    A. I. D’Souza, M. G. Stapelbroek, P. N. Dolan… in Journal of Electronic Materials (2003)

  9. No Access

    Article

    1/f noise in very-long-wavelength infrared Hg1−xCdx Te detectors

    This paper investigates 1/f noise performance of very-long-wavelength infrared (VLWIR) Hg1−xCdxTe (cutoff wavelengths λc=15 µm and λc=16 µm) photodiodes at 78 K, where detector current is varied by changing detec...

    A. I. D’Souza, M. G. Stapelbroek, P. S. Wijewarnasuriya… in Journal of Electronic Materials (2002)

  10. No Access

    Article

    Advances in large-area Hg1−xCdxTe photovoltaic detectors for remote-sensing applications

    State-of-the-art large-area photovoltaic (PV) detectors fabricated in HgCdTe grown by molecular beam epitaxy (MBE) have been demonstrated for the Crosstrack Infrared Sounder (CrIS) instrument. Large-area devic...

    P. S. Wijewarnasuriya, M. Zandian, J. Phillips… in Journal of Electronic Materials (2002)

  11. No Access

    Article

    Current mechanisms in VLWIR Hg1−xCdxTe photodiodes

    VLWIR (c∼15 m to 17 m at 78 K) detectors have been characterized as a function of temperature to determine the dominant current mechanisms impacting detector performance. Id−Vd curves indicate that VLWIR detector...

    A. I. D'Souza, R. E. Dewames, P. S. Wijewarnasuriya… in Journal of Electronic Materials (2001)

  12. No Access

    Article

    Large VLWIR Hg1−xCdxTe photovoltaic detectors

    Very long wavelength infrared (VLWIR; 15 to 17 µm) detectors are required for remote sensing sounding applications. Infrared sounders provide temperature, pressure and moisture profiles of the atmosphere used ...

    A. I. D’Souza, L. C. Dawson, C. Staller… in Journal of Electronic Materials (2000)

  13. No Access

    Article

    Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors

    Excess low frequency noise is investigated for the first time in infrared MBE grown LWIR Hg1−xCdxTe double layer planar heterostructure (DLPH) detectors grown on lattice matched substrates. LWIR detectors having ...

    A. I. D’Souza, P. S. Wijewarnasuriya, R. E. Dewames… in Journal of Electronic Materials (1999)

  14. No Access

    Article

    Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance

    Long wavelength infrared molecular beam epitaxy (MBE) grown p-on-n Hg1−xCdxTe double layer planar heterostructure (DLPH) detectors have been characterized to determine the dominant mechanisms limiting their perfo...

    P. S. Wijewarnasuriya, M. Zandian, D. B. Young… in Journal of Electronic Materials (1999)

  15. No Access

    Article

    MWIR DLPH HgCdTe photodiode performance dependence on substrate material

    Mid wavelength infrared p-on-n double layer planar heterostructure (DLPH) photodiodes have been fabricated in HgCdTe double layers grown in situ by liquid phase epitaxy (LPE), on CdZnTe and for the first time on ...

    A. I. D’Souza, J. Bajaj, R. E. De Wames, D. D. Edwall… in Journal of Electronic Materials (1998)

  16. No Access

    Article

    MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates

    The capability of growing state-of-the-art middle wavelength infrared (MWIR)-HgCdTe layers by molecular beam epitaxy (MBE) on large area silicon substrates has been demonstrated. We have obtained excellent com...

    P. S. Wijewarnsuriya, M. Zandian, D. D. Edwall… in Journal of Electronic Materials (1998)

  17. No Access

    Article

    VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications

    The molecular beam epitaxy (MBE) growth technology is inherently flexible in its ability to change the Hg1−xCdxTe material’s bandgap within a growth run and from growth run to growth run. This bandgap engineering...

    A. I. D’souza, L. C. Dawson, E. J. Anderson… in Journal of Electronic Materials (1997)

  18. No Access

    Article

    High performance SWIR HgCdTe detector arrays

    Short wave infrared (SWIR) devices have been fabricated using Rockwell’s double layer planar heterostructure (DLPH) architecture with arsenic-ion implanted junctions. Molecular beam epitaxially grown HgCdTe/Cd...

    L. O. Bubulac, W. E. Tennant, J. G. Pasko… in Journal of Electronic Materials (1997)