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  1. Article

    Open Access

    Formation of a periodic structure on the surface of InP crystal during irradiation with bismuth ions

    This work is devoted to the study of the formation of periodic relief on the InP surface during ion sputtering by bismuth ions with an energy of 30 keV and an angle of incidence of 45° respect to normal incide...

    Yu. Kudriavtsev, A. G. Hernandez in Journal of Materials Science: Materials in… (2024)

  2. No Access

    Article

    Short period p-type AlN/AlGaN superlattices for deep UV light emitters.

    The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole c...

    S. Nikishin, B. Borisov, V. Mansurov, M. Pandikunta in MRS Online Proceedings Library (2020)

  3. No Access

    Article

    Study of Secondary Ion Emission in the “Thermal Spike” Mode

    The sources of heavy cluster ions (Au, Bi) used in modern mass spectrometers suggest that the emission of secondary ions is predominantly performed in the thermal spike mode, unlike the previous generation of ...

    Yu. Kudryavtsev, I. Guerrero, R. Asomoza in Journal of Surface Investigation: X-ray, S… (2020)

  4. No Access

    Article

    Optimization of Ge substrates for ZnO deposition and their application for CO2 detection

    The present work focuses on the deposition of ZnO thin films on crystalline and porous Germanium substrates for hazardous gas detection. The porous Ge substrates were obtained by means of surface exfoliation b...

    Angelica Guadalupe Hernandez in Journal of Materials Science: Materials in… (2019)

  5. No Access

    Article

    Structural Properties of Ultrasonically Sprayed Al-Doped ZnO (AZO) Thin Films: Effect of ZnO Buffer Layer on AZO

    Transparent aluminium-doped ZnO (AZO)-conducting oxide films were deposited on a glass substrate, using an ultrasonic spray pyrolysis (USP) system at 475°C. We investigated the effects of the Al/Zn atomic rati...

    B. J. Babu, S. Velumani, J. Arenas-Alatorre, A. Kassiba in Journal of Electronic Materials (2015)

  6. No Access

    Article

    Effect of milling time and heat treatment on the composition of CuIn0.75Ga0.25Se2 nanoparticle precursors and films

    Preparation of pure phase CuIn0.75Ga0.25Se2 nanoparticle powder by ball milling technique has been confirmed for the milling time of more than 45 min at 1200 rpm. Formation of shear bands responsible for breakdow...

    B. Vidhya, S. Velumani, R. Asomoza in Journal of Nanoparticle Research (2011)

  7. No Access

    Article

    Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeYSi1-Y Films Deposited by Low Frequency Plasma

    We report on a systematic study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by...

    Andrey Kosarev, L. Sanchez, A. Torres, T. Felter in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Mechano-chemical Synthesis, Deposition and Structural Characterization of CIGS

    CuInGaSe2 (CIGS) is a prominent thin-film photovoltaic material. However, commonly used physical vapour deposition and sputtering techniques used to fabricate CIGS thin-film photovoltaic (PV) devices are complex ...

    B. Vidhya, S. Velumani, Jesus Arenas-Alatorre, R. Asomoza in MRS Online Proceedings Library (2010)

  9. No Access

    Article

    Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN

    We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (ρc) of Au/Ni ohmic contacts to p-GaN and p-AlGaN. Ohmic contact on p-GaN...

    I. Chary, B. Borisov, V. Kuryatkov, Yu. Kudryavtsev in MRS Online Proceedings Library (2009)

  10. No Access

    Article

    Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution

    We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition r...

    A. Kosarev, A. Torres, Y. Hernandez, R. Ambrosio in Journal of Materials Research (2006)

  11. No Access

    Article

    Highly conductive and transparent In-doped zinc oxide thin films deposited by chemical spray using Zn(C5H7O2)2

    Highly conductive and transparent indium-doped zinc oxide, ZnO, thin films were deposited on sodocalcic glass substrates by chemical spray, using zinc acetylacetonate, Zn(C5H7O2)2, and doped with indium chloride....

    A. Maldonado, M. dela L. Olvera, R. Asomoza in Journal of Materials Science: Materials in… (2001)

  12. No Access

    Article

    Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

    We report the results of epitaxial growth experiments on AlxGa1−xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures result...

    S. Nikishin, G. Kipshidze, V. Kuryatkov, A. Zubrilov in MRS Online Proceedings Library (2001)

  13. No Access

    Article

    Conductive and transparent ZnO:Al thin films obtained by chemical spray

    Electrical, structural, morphological and optical characteristics of ZnO:Al thin films obtained by chemical spray are presented in this paper. The dependence of the resistivity on the substrate temperature and...

    M. de la L. Olvera, A. Maldonado, R. Asomoza in Journal of Materials Science: Materials in… (2000)

  14. No Access

    Article

    Chemical stability of doped ZnO thin films

    We present the results of a chemical etching stability study carried out on ZnO thin films doped with several elements deposited by spray pyrolysis. Prior to the etching, a structural study was done by X-ray d...

    M. de la L. Olvera, A. Maldonado, R. Asomoza in Journal of Materials Science: Materials in… (2000)

  15. No Access

    Article

    Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

    Zinc oxide thin films doped with zirconium were prepared from solutions with do** material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic...

    A. Maldonado, D. R. Acosta, M. De La Luz Olvera in MRS Online Proceedings Library (1998)

  16. No Access

    Article

    ZnO: In Thin Films Prepared with Different Precursor Salts by Spray Pyrolysis and Studied by Electron Microscopy.

    In this work we present some results of a systematical study of structural and optoelectronic properties of Zn O: In thin films obtained by spray pyrolysis when the acidity and the solvent used in starting sol...

    D. R. Acosta, O. Lovera, A. Maldonado, R. Asomoza in MRS Online Proceedings Library (1994)

  17. No Access

    Article

    Tin oxide films grown over glass and KBr at several substrate temperatures

    Tin oxide films were deposited by spray pyrolysis on KBr and glass substrates. Conventional and high-resolution electron microscopy were used to determine grain sizes, atomic arrays and crystallographic detail...

    D. R. Acosta, A. Maldonado, R. Asomoza in Journal of Materials Science: Materials in… (1993)

  18. No Access

    Chapter and Conference Paper

    Determination of Impurity Content in SnO2 Thin Films Using Nuclear Reactions

    The determination of the dopant concentration in semiconductors is important to understand their transport properties. In the case of SnO2:F thin films, prepared by spray pyrolysis, the usual surface analysis met...

    R. Asomoza, A. Maldonado, J. Rickards, E. P. Zironi, M. H. Farías in Surface Science (1991)

  19. No Access

    Article

    Quantitative Measurement of Hydrogen Content in a-Si:H by Ar+ Excited Auger.

    Hydrogenated amorphous silicon (a-Si:H) is well known by its applications for solar energy conversion devices in a large scale. Hydrogen has the capability of terminating the dangling bonds in the amorphous si...

    M. H. Farias, G. A. Hirata, L. Cota-Araiza, D. H. Galvan in MRS Online Proceedings Library (1987)