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Article
Short period p-type AlN/AlGaN superlattices for deep UV light emitters.
The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole c...
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Article
Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers
Characterization of three vendor’s bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: scanning electron microscopy, secondary ion ...
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Article
Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN
We have studied the influence of surface treatment and annealing temperature on the specific contact resistance of Au/Ni ohmic contacts to p-GaN with hole concentrations in the range of 1016 cm−3 to 1018 cm−3. Th...
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Article
Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN
We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (ρc) of Au/Ni ohmic contacts to p-GaN and p-AlGaN. Ohmic contact on p-GaN...
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Article
InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates.
This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were car...
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Article
Mechanism of Metalorganic MBE Growth of High Quality AIN on Si (111)
AlN constitutes the buffer layer of choice for the growth of GaN on all common substrates and its crystalline quality and surface morphology determine many of the properties of the overgrown epitaxial structur...
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Article
High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy
Epitaxial layers of AlN and GaN were grown by gas source molecular-beam epitaxy on a composite substrate consisting of a thin (250 nm) layer of silicon (111) bonded to a polycrystalline SiC substrate. Two dime...
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Article
Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire
We report the results of epitaxial growth experiments on AlxGa1−xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures result...