2 Result(s)
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Po-Hsien Cheng
Science, Humanities and Social Sciences, multidisciplinary
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Article
Open AccessRoom-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta do** and deposition
Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below ...
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Article
Open AccessNovel Self-shrinking Mask for Sub-3 nm Pattern Fabrication
It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic and computing devices. Here we propose a completely original and nove...
