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Article
Spectroscopic studies of O-vacancy defects in transition metal oxides
Dielectrics comprised of nano-crystalline HfO2 in gate stacks with thin SiO2/SiON interfacial transition regions display significant asymmetries with respect to trap** of Si substrate injected holes and electro...
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Article
Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance
Electron traps in ALD and MOCVD HfO2 and HfSiO high-k dielectrics were investigated using both conventional DC and pulse measurements. It was found that the traps in the gate stack could be associated with defect...
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Article
Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface
We have demonstrated a uniform, robust interface for high-k deposition with significant improvements in device electrical performance compared to conventional surface preparation techniques. The interface was ...
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Article
Process and Manufacturing Challenges for High-K Gate Stack Systems
A design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics....
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Chapter and Conference Paper
Design experience with fine-grained FPGAs
The performance of fine-grained, cellular FPGAs is improving rapidly. In this paper, the experience of working with two relatively fine-grained FPGA architectures, the Atmel 6005 FPGA and the Dynamically Progr...
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Chapter and Conference Paper
Artificial neural network implementation on a fine-grained FPGA
This paper reports on the implementation of an Artificial Neural Network (ANN) on an Atmel AT6005 Field Programmable Gate Array (FPGA). The work was carried out as an experiment in map** a bit-level, logical...