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Article
Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures
The effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion...
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Article
Boron Segregation and Electrical Properties in Polycrystalline SiGeC
Previously, it has been reported that PMOS capacitors with heavily boron-doped polycrystalline SiGeC gates are less susceptible to boron penetration than those with poly Si gates [1]. Boron appears to accumula...
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Article
Experimental Studies of Photoluminescence in Mn-Ion Implanted Silicon Rich Oxide Thin Film
In this paper, we wish to report our preliminary experimental results from the photoluminescence (PL) studies in a Mn-ion implanted silicon-rich oxide (SRO) thin film. At 4 K, a broad PL peak, centered at ~ 1....
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Article
Thermal Stability and Substitutional Carbon Incorporation far above Solid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane
Growth conditions for epitaxy of Si1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the ...
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Article
Implantation and Activation of High Concentrations of Boron and Phosphorus in Germanium
The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm−2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this...
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Article
Phosphorus and Boron Implantation into (100) Germanium
Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm−2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spe...
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Article
Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers
Substitutional carbon is known to locally reduce silicon self-interstitial concentrations and act as a barrier to self-interstitial migration through the carbon rich regions. A silicon spacer between two carbo...
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Article
Quantitative Measurement of Interstitial Flux and Surface Super-saturation during Oxidation of Silicon
During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interst...
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Article
Quantitative Measurement of Reduction of Phosphorus Diffusion by Substitutional Carbon Incorporation
Complete suppression of transient enhanced boron diffusion (TED) and oxidation enhanced boron diffusion (OED) in silicon have been achieved using substitutional carbon to reduce the excess point defect concent...
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Article
Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation
Recently, the suppression of boron diffusion due to both thermal and transient enhanced diffusion (TED) has been demonstrated through the incorporation of 0.5% substitutional carbon in the base of Si/SiGe/Si h...
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Article
Novel Applications of Rapid Thermal Chemical Vapor Deposition for Nanoscale MOSFET’s
In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 rum MOSFET’s. Vertical dual-gated MOSFET’s are used as a test vehicle to implemen...