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  1. No Access

    Article

    Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes

    We report on experiments which unequivocal identify the chemical nature of optical transitions related to As (2.58 eV), Ge (3.398 eV) and Se (1.49 eV) found in the photoluminescence (PL) spectra of GaN. For th...

    A. Stötzler, R. Weissenborn, M. Deicher… in MRS Online Proceedings Library (2012)

  2. No Access

    Article

    Photoluminescence characterization of Mg implanted GaN

    Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300°C for 10-60 minutes. Photol...

    C. Ronning, H. Hofsäss, A. Stötzler, M. Deicher… in MRS Online Proceedings Library (2012)

  3. No Access

    Article

    Geometrical Structure of Lattice Defect-Impurity Configurations Determined by TDPAC

    The perturbed angular correlation technique (TDPAC) was applied to determine the orientation of the electric field gradient tensor induced by lattice defects at the probe 111In. The experimental results obtained ...

    M. Deicher, O. Echt, E. Recknagel, Th. Wichert in MRS Online Proceedings Library (2011)

  4. Article

    Photoluminescence characterization of Mg implanted GaN

    Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 °C for 10-60 minutes. Photo...

    C. Ronning, H. Hofsäss, A. Stötzler… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (63 KB) View Article

  5. Article

    Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes

    We report on experiments which unequivocal identify the chemical nature of optical transitions related to As (2.58 eV), Ge (3.398 eV) and Se (1.49 eV) found in the photoluminescence (PL) spectra of GaN. For th...

    A. Stötzler, R. Weissenborn, M. Deicher… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (111 KB) View Article

  6. No Access

    Article

    The Incorporation and Complex Formation of Ag Acceptors in CdTe

    Using the radioactive isotope111Ag, the incorporation of Ag into CdTe is investigated by photoluminescence spectroscopy (PL) and the perturbed yy-angular correlation technique (PAC). PL is used to demonstrate the...

    H. Wolf, T. Filz, J. Hamann, V. Ostheimer, S. Lany… in MRS Online Proceedings Library (1998)

  7. No Access

    Article

    Microscopic Study of the Hydrogen Diffusion in III–V Semiconductors

    We report on experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, GaAs, and InAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconduc...

    A. Burchard, M. Deicher, D. Forkel-Wirth, M. Knopf… in MRS Online Proceedings Library (1998)

  8. No Access

    Article

    Recovery of Structural Defects in GaN After Heavy Ion Implantation

    Single crystalline GaN-layers were implanted with radioactive 111In ions. The lattice location of the ions and the recovery of the implantation induced damage was studied using the emission channeling technique a...

    C. Ronning, M. Dalmer, M. Deicher, M. Restle… in MRS Online Proceedings Library (1997)

  9. No Access

    Article

    First Microscopic Observation of Cadmium-Hydrogen Pairs in GaN

    The formation and properties of acceptor-hydrogen pairs in GaN have been studied using radioactive 111mCd acceptors and the perturbed γγ angular correlation spectroscopy (PAC). After H-loading by low energy impla...

    A. Burchard, M. Deicher, D. Forkel-Wirth, E. E. Haller… in MRS Online Proceedings Library (1996)

  10. No Access

    Article

    Passivating Complexes in Cd Doped GaAs and InP: Microscopic Properties and Electrical Effects

    Perturbed Angular Correlation (PAC) and Hall measurements were used to investigate the stability of the passivating Cd-H complex in GaAs after low energy H implantation (150 eV, 1014 cm−2) at 300 K. From the obse...

    N. Moriya, M. Deicher, R. Kalish, R. Keller, R. Magerle… in MRS Online Proceedings Library (1992)

  11. No Access

    Article

    Regrowth of Damaged Layers in Diamond Produced by Ion Implantation

    We have used RBS/Channeling, perturbed angular correlation (PAC) and optical absorption to study the regrowth of disordered layers in diamond produced by implantation with carbon, or with carbon plus boron or ...

    G. S. Sandhu, B. Liu, N. R. Parikh, J. D. Hunn… in MRS Online Proceedings Library (1989)

  12. No Access

    Article

    Formation of In-Cu Pairs in Silicon During Chemomechanical Polishing

    Using the perturbed γγ angular correlation technique (PAC) the pairing of Cu with the radioactive acceptor atom111In in Si is detected. Because of the identity of the electric field gradients the so-called X defe...

    Th. Wichert, R. Keller, M. Deicher, W. Pfeiffer… in MRS Online Proceedings Library (1989)

  13. No Access

    Article

    Localization of Hydrogen in B and in Doped Silicon by ion Channeling and PAC

    The lattice site of H/D atoms in silicon doped with B and 111In atoms is investigated using the ion channeling and perturbed "yr angular correlation (PAC) technique. The results indicate that at 295 K the antibon...

    Th. Wichert, H. Skudlik, H.-D. Carstanjen, T. Enders… in MRS Online Proceedings Library (1987)