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Article
Structural and optical characterization of indium-antimony complexes in ZnO
One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable p-type do** of ZnO with group V elements (N, P, As, Sb) acting as accept...
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Article
Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
We report on experiments which unequivocal identify the chemical nature of optical transitions related to As (2.58 eV), Ge (3.398 eV) and Se (1.49 eV) found in the photoluminescence (PL) spectra of GaN. For th...
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Article
Photoluminescence characterization of Mg implanted GaN
Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300°C for 10-60 minutes. Photol...
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Article
Geometrical Structure of Lattice Defect-Impurity Configurations Determined by TDPAC
The perturbed angular correlation technique (TDPAC) was applied to determine the orientation of the electric field gradient tensor induced by lattice defects at the probe 111In. The experimental results obtained ...
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Article
Donor-acceptor complexes in ZnO
One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable and sufficient p-type do**. The theoretically proposed concepts of clust...
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Chapter and Conference Paper
Formation of DX-centers in indium doped CdTe
In CdTe, the achievable n-type do** is limited by the formation of DX-centers. A characteristic feature of DX-centers is the ‘persistent photoconductivity (PPC)’ which is created by illumination at low temperat...
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Article
Formation of DX-centers in indium doped CdTe
In CdTe, the achievable n-type do** is limited by the formation of DX-centers. A characteristic feature of DX-centers is the ‘persistent photoconductivity (PPC)’ which is created by illumination at low temperat...
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Chapter and Conference Paper
Structural Properties of the Donor Indium in Nanocrystalline ZnO
The structural properties of the nanocrystalline semiconductor ZnO (nano-ZnO) doped with the donor Indium were investigated by perturbed γγ angular correlation spectroscopy (PAC) and extended X-ray absorption ...
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Article
Structural properties of the donor indium in nanocrystalline ZnO
The structural properties of the nanocrystalline semiconductor ZnO (nano-ZnO) doped with the donor Indium were investigated by perturbed γγ angular correlation spectroscopy (PAC) and extended X-ray absorption ...
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Article
Hyperfine Interaction Studies on Y, Zr, Nb, Mo, Rh, In and Xe in Co
Nuclear magnetic resonance on oriented nuclei and modulated adiabatic fast passage on oriented nuclei measurements were performed on several 4d and 5sp impurities in polycrystalline Co(fcc) foils and Co(hcp) sing...
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Article
Solid state physics at ISOLDE
Radioactive atoms have been used in solid state physics and in materials science for decades. Besides their classical applications as tracers for diffusion studies, nuclear techniques such as Mössbauer spectro...
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Chapter and Conference Paper
Applications of radioactive ion beams to solid-state physics
Radioactive atoms have been used in solid-state physics and in material science for many decades. Besides their classical application as tracer for diffusion studies, nuclear techniques such as Mofibauer spect...
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Article
Applications of radioactive ion beams to solid-state physics
Radioactive atoms have been used in solid-state physics and in material science for many decades. Besides their classical application as tracer for diffusion studies, nuclear techniques such as Mößbauer spectr...
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Article
Ferromagnetic Semiconductors Studied by Hyperfine Interaction of Nuclear Probes
The ferromagnetic spinels CdCr2Se4 and CuCr2Se4 were investigated by PAC (perturbed angular correlations) after implantation of the probes 111In(111Cd), 111mCd, 111Ag(111Cd) and 77Br(77Se). The site occupation of...
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Article
Photoluminescence characterization of Mg implanted GaN
Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 °C for 10-60 minutes. Photo...
-
Article
Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
We report on experiments which unequivocal identify the chemical nature of optical transitions related to As (2.58 eV), Ge (3.398 eV) and Se (1.49 eV) found in the photoluminescence (PL) spectra of GaN. For th...
-
Article
Photoluminescence analysis of semiconductors using radioactive isotopes
The combination of photoluminescence spectroscopy with the radioactive isotopes 7Be, 71As, 111Ag, 111In, 191Pt, 193Au and 197Hg is shown to provide definitive proof of the chemical identity of impurities producin...
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Article
Semiconductors with structurally determined vacancies – PAC studies
Ternary semiconductors of type □AIIB 2 III C 4 VI with an ordered array of vacancies were investigated by P...
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Article
Electric field gradients of acceptor–donor pairs in semiconductors
The interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si...
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Article
The Incorporation and Complex Formation of Ag Acceptors in CdTe
Using the radioactive isotope111Ag, the incorporation of Ag into CdTe is investigated by photoluminescence spectroscopy (PL) and the perturbed yy-angular correlation technique (PAC). PL is used to demonstrate the...
