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Passivating Complexes in Cd Doped GaAs and InP: Microscopic Properties and Electrical Effects

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Perturbed Angular Correlation (PAC) and Hall measurements were used to investigate the stability of the passivating Cd-H complex in GaAs after low energy H implantation (150 eV, 1014 cm−2) at 300 K. From the observed Cd-H pair formation and reduction of hole concentration it is deduced that about 10 % of the implanted H atoms form pairs with the Cd atoms. The influence of the dopant depth profile on the apparent stability in zero bias isochronal annealing experiments is reported. After H loading a reduction of carrier mobility is observed, which is stable up to about 400 K. The formation of Cd-H pairs after low energy H implantation into InP was studied by PAC. By measuring the fraction of pairs in an isochronal annealing experiment, the stability of the pairs is deduced yielding a dissociation energy of ED = 1.8(1) eV.

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Authors and Affiliations

  1. Physics Department and Solid State Institute, Technion, Haifa, 32000, Israel

    N. Moriya & R. Kalish

  2. Fakultät für Physik, Universität Konstanz, D-7750, Konstanz, Germany

    M. Deicher, R. Keller, R. Magerle, W. Pfeiffer, P. Pross & H. Skudlik

  3. Technische Physik, Universität des Saarlandes, D-6600, Saarbrücken, Germany

    Th. Wichert & H. Wolf

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  1. N. Moriya
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  2. M. Deicher
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  3. R. Kalish
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  4. R. Keller
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  5. R. Magerle
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  6. W. Pfeiffer
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  7. P. Pross
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  8. H. Skudlik
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  9. Th. Wichert
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  10. H. Wolf
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Moriya, N., Deicher, M., Kalish, R. et al. Passivating Complexes in Cd Doped GaAs and InP: Microscopic Properties and Electrical Effects. MRS Online Proceedings Library 262, 431–436 (1992). https://doi.org/10.1557/PROC-262-431

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  • DOI: https://doi.org/10.1557/PROC-262-431

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