Rare-Earth Implanted MOS Devices for Silicon Photonics
Microstructural, Electrical and Optoelectronic Properties
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Article
Open AccessA snapshot review on flash lamp annealing of semiconductor materials
Flash lamp annealing (FLA) is a non-equilibrium annealing method on the sub-second time scale which excellently meets the requirements of thin-film processing. FLA has already been used in microelectronics, mo...
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Article
Open AccessOn Curie temperature of B20-MnSi films
B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of t...
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The Technology of Flash Lamp Annealing
This chapter addresses various technical aspects of FLA and starts with the individual FLA tool and flash lamp components, followed by a description of the plasma properties during operation. The section about...
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Semiconductor Applications
This chapter gives an overview where flash lamp annealing is used in semiconductor applications. After a short introduction to defect engineering several use cases in the field of do** are discussed includin...
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Introduction
This chapter gives a brief history of thermal treatments in general and flash lamp annealing in particular. It introduces the basic thermodynamic values thermal diffusivity, thermal diffusion length and therma...
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Process Management
This chapter discusses a couple of issues which are relevant for process management. Thereby, the main focus is on temperature measurement and temperature simulation. The first section deals with pyrometry as ...
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Beyond Semiconductors
This chapter gives a brief overview about flash lamp annealing of non-semiconductor materials, although the line to semiconductors is flexible. The first section is devoted to dielectric thin films with the fo...
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Article
Open AccessOn the insulator-to-metal transition in titanium-implanted silicon
Hyperdoped silicon with deep level impurities has attracted much research interest due to its promising optical and electrical properties. In this work, single crystalline silicon supersaturated with titanium ...
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Article
Open AccessRoom-temperature short-wavelength infrared Si photodetector
The optoelectronic applications of Si are restricted to the visible and near-infrared spectral range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance, has been a long-stan...
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Article
Open AccessUltra-doped n-type germanium thin films for sensing in the mid-infrared
A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a...
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III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy
Direct integration of high-mobility III–V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor (CMOS) processing platforms presents the main challenge to increasing the CMOS p...
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Rare Earth Implanted MOS Structures: Advantages and Drawbacks for Optoelectronic Applications
In this paper the advantages and drawbacks of rare earth-implanted MOS structures for optoelectronic applications are investigated. The discussion starts with a short overview of the electroluminescence proper...
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