6 Result(s)
within
Kyung-Ho Park
Materials Engineering
Materials Science, general
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Article
Electrical Properties of Diamond MISFETs with Submicron-Sized Gate on Boron-Doped (111) Surface
An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al2O3 gate insulators and ...
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Article
Microstructure Analysis of Agglomerated Epitaxial Columns of Si/PtSi/Si(111) Double Heterostructure
Micro structures and interface structures of epitaxially grown PtSi and over-cap** Si films on Si(111) substrates prepared by MBE were studied by RHEED, HREM, SEM and XRD. An epitaxially grown Si layer on th...
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Article
Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs(100) Substrate Using Unprecracked Arsine and Trimethylgallium
We present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE(chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises line...
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Article
Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching
A procedure for preparing cross-sectional TEM specimens by focused ion beam etching (FIB) of specific regions on an integrated circuit chip is outlined. The investigation of the morphology, structure and local...
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Article
Cross-Sectional TEM Study of Three-Dimensional MOS Devices
This paper describes cross-sectional transmission electron microscopy (TEM) observation on finished 3-D MOS devices, fabricated with a laser-recrystallized SOI. The laser-recrystallized SOI contained crystal d...
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Article
Tem Studies of Silicon-Silicon Oxide Interface Roughness
Interfaces between two kind of substrate, a bulk silicon wafer and a laser-recrystallized Silicon-On-Insulator (SOI), and its thermally grown oxide have been studied. High resolution transmission electron micr...
